GaN HEMT器件封装热特性仿真分析  

The simulation analysis of the packaged GaN HEMT device's thermal characteristic

作　　者：崔虹云[1] 吴云飞[1] 司有宝[2] 候宪春[1] 张运香[3] 李培瑶 柳涛[1] 

机构地区：[1]佳木斯大学理学院,黑龙江佳木斯154007 [2]佳木斯大学后勤管理处,黑龙江佳木斯154007 [3]佳木斯大学商学院,黑龙江佳木斯154007

出　　处：《黑龙江工程学院学报》2016年第2期38-41,共4页Journal of Heilongjiang Institute of Technology

基　　金：2014年黑龙江省大学生创新创业训练计划项目(201410222059);2012年佳木斯大学青年基金项目(Lq2012-42)

摘　　要：主要研究在大功率工作条件下的带封装的GaN HEMT器件自加热效应。当封装GaN HEMT器件工作在大功率条件下时所产生的自加热效应会使器件栅指处的有源沟道层温度升高,同时多栅指之间还会产生互加热效应,使得器件的有源沟道层的温度升高,影响器件的工作特性。主要分析具有封装结构的多栅指结构的GaN HEMT器件在一定功耗条件下的温度分布情况。多栅指器件的中心栅指处的温度最高,并且相比于其他栅指,中心栅指在其中心处达到在给定功耗下的最高温度。在此基础上,指出在进行器件设计时,要考虑中心栅指的温度,以免造成器件在实际工作中烧毁。This paper investigates the self-heating effect of the packaged GaN HEM T devices at high power operating conditions .The self-heating effect produced by GaN HEMT device operating at high power conditions ,as well as the inter-heating between the gates ,will make the temperature of the active channel layer increase ,thus affecting the operating characteristics of the device .T his paper ,mainly ,analyzes the temperature distribution of the multi-finger GaN HEM T packaged device structure under certain conditions .The multi-finger GaN HEMT packaged device structure is hottest in its central regions . Compared to the other finger ,the center gate in its central refers to the highest temperature at definite pow er loss .Based on those results ,the temperature of the center finger should be taken into account w hile being designed in order to protect the device from burnt .

关 键 词：自加热效应 封装 

分 类 号：O157.5[理学—数学]