Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method  

作　　者：张绍骞 Petre Němec Virginie Nazabal 金玉奇 

机构地区：[1]Key Laboratory of Chemical Laser, Dalian Institute of Chemical Physics, Chinese Academy of Sciences [2]Institut des Sciences Chimiques de Rennes,équipe Verres et Céramiques, Université de Rennes [3]Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice

出　　处：《Optoelectronics Letters》2016年第3期199-202,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61308092);the Natural Science Foundation of Liaoning Province of China(No.2013010590-401/20131116)

摘　　要：Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge_(25)Ga)5Sb_(10)S_(65)(doped with Er^(3+)) spacer layer surrounded by two 5-layer As_(40)Se_(60)/Ge_(25)Sb_(5)S_(70) reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.

关 键 词：多层薄膜 脉冲激光沉积法 多层结构 光子带隙 硫系 非晶 布拉格反射镜 脉冲激光沉积技术 

分 类 号：TB383.2[一般工业技术—材料科学与工程]