特定手性单壁碳纳米管的可控生长  

Specific Chirality-controlled Growth of Single-walled Carbon Nanotubes

作　　者：唐磊[1,2] 卢会芬[2] 李涛涛[2] 方建慧[1] 姚亚刚[2] 

机构地区：[1]上海大学理学院,上海200444 [2]中国科学院苏州纳米技术与纳米仿生研究所,苏州215123

出　　处：《材料导报》2016年第7期15-21,共7页Materials Reports

基　　金：国家自然科学基金(51372265)

摘　　要：单壁碳纳米管具有优异的电学、光学、热学、力学等性能,可能成为未来纳米器件的支撑材料之一。实现碳纳米管的结构可控生长制备依然面临着严峻的挑战。其中手性控制是单壁碳纳米管可控制备的最大挑战,它的实现标志着直径、壁数、手性角及导电属性等的可控制备。以特定手性单壁碳纳米管的可控生长为中心,分别综述了利用化学气相沉积法在粉体生长与表面生长两方面实现手性可控生长的研究进展,并在此基础上总结出基本思路,为实现单一手性碳纳米管的可控制备奠定基础。Single-walled carbon nanotubes （SWNTs） have long been regarded as the star material in the field of nanomaterials and nanotechnologies due to their special structures and extraordinary properties such as excellent electrical, optical, thermal and mechanical properties. However, how to achieve the structure-controlled growth of carbon nanotubes is still facing severe challenges. Among them, the chirality-controlled growth is a successful symbol of the realization of controlled growth for the diameter, the wall number, the clairal angle and the conductive property. Herein, this review highlights the methods for chirality-controlled growth of SWNTs by chemical vapor deposition （CVD） method in bulk growth and superficial growth. We try to propose the general guidelines and expect to lay the foundation for the specific chirality-controlled growth of SWNTs.

关 键 词：单壁碳纳米管 手性 可控生长 化学气相沉积 

分 类 号：O643.3[理学—物理化学]