Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure  

作　　者：朱青 马晓华 陈伟伟 侯斌 祝杰杰 张濛 陈丽香 曹艳荣 郝跃 

机构地区：[1]School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China [2]Key Laboratory of Wide Band, Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China [3]School of Mechano-electric Engineering, Xidian University, Xi'an 710071, China

出　　处：《Chinese Physics B》2016年第6期489-493,共5页中国物理B（英文版）

基　　金：Project supported by the National Key Basic Research Program of China(Grant No.2011CBA00606);the Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915);the National Natural Science Foundation of China(Grant Nos.61334002 and 61404097)

摘　　要：Deep level transient spectroscopy（DLTS） as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors（HEMTs） has been widely utilized.The DLTS measurements under different bias conditions are carried out in this paper.Two hole-like traps with active energies of E_v ＋ 0.47 eV,and E_v ＋ 0.10 eV are observed,which are related to surface states.The electron traps with active energies of E_c-0.56 eV are located in the channel,those with E_c-0.33 eV and E_c-0.88 eV are located in the AlGaN layer.The presence of surface states has a strong influence on the detection of electron traps,especially when the electron traps are low in density.The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.Deep level transient spectroscopy（DLTS） as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors（HEMTs） has been widely utilized.The DLTS measurements under different bias conditions are carried out in this paper.Two hole-like traps with active energies of E_v ＋ 0.47 eV,and E_v ＋ 0.10 eV are observed,which are related to surface states.The electron traps with active energies of E_c-0.56 eV are located in the channel,those with E_c-0.33 eV and E_c-0.88 eV are located in the AlGaN layer.The presence of surface states has a strong influence on the detection of electron traps,especially when the electron traps are low in density.The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.

关 键 词：ALGAN/GAN hole-like traps DLTS surface states 

分 类 号：TN386[电子电信—物理电子学]