Study of doping uniformity of a 200 kV ion implanter by RBS and sheet resistance measurements  

作　　者：Hui Li Ze-Song Wang Sheng-Jun Zhang Vasiliy O.Pelenovich Feng Ren De-Jun Fu Chuan-Sheng Liu Zhi-Wei Ai 

机构地区：[1]Key Laboratory of Artificial Micro-and Nano-Materials of Ministry of Education and School of Physics and Technology,Wuhan University,Wuhan 430072,China [2]Institute of Ion-Plasma and Laser Technologies,Academy of Sciences of Uzbekistan,Tashkent 700135,Uzbekistan

出　　处：《Nuclear Science and Techniques》2016年第3期40-44,共5页核技术（英文）

基　　金：supported by the National Natural Science Foundation of China(Nos.11405117 and 11205116);International Cooperation Program of the Ministry of Science and Technology of China(No.2015DFR00720)

摘　　要：The ion implantation uniformity is of vital importance for an ion implanter.In this paper,we report the,uniformity measurement for a large current ion implanter(LC-16 type) by implanting of 190-keV Ar ions into Si to 3×1016 atoms/cm2,followed by Rutherford backscattering spectroscopy(RBS) and sheet resistance measurement providing quantitative information on spatial distribution of dopants.The implant doses obtained from RBS at selected points of the sample give a spatial uniformity of <5%,which are confirmed by the sheet resistance measurement.While sheet resistance is an indirect method for dose evaluation of ion-implanted samples,RBS provides a competent technique for calibration of the ion implantation system.And both measurements show that good uniformity can be achieved for the ion implanter by tuning of the scanning process.The ion implantation uniformity is of vital importance for an ion implanter.In this paper,we report the,uniformity measurement for a large current ion implanter（LC-16 type） by implanting of 190-keV Ar ions into Si to 3×10^16 atoms/cm^2,followed by Rutherford backscattering spectroscopy（RBS） and sheet resistance measurement providing quantitative information on spatial distribution of dopants.The implant doses obtained from RBS at selected points of the sample give a spatial uniformity of 〈5%,which are confirmed by the sheet resistance measurement.While sheet resistance is an indirect method for dose evaluation of ion-implanted samples,RBS provides a competent technique for calibration of the ion implantation system.And both measurements show that good uniformity can be achieved for the ion implanter by tuning of the scanning process.

关 键 词：均匀性测量 离子注入机 薄层电阻 掺杂分布 RBS 卢瑟福背散射 离子注入系统 剂量评价 

分 类 号：TN305.3[电子电信—物理电子学] TN304.07