微波化学气相沉积制备氧化铝薄膜及钝化性能研究  

Passivation of AlO_x Coatings Synthesized by Microwave Plasma Enhanced Chemical Vapor Deposition on Si-Substrate

作　　者：张健[1] 巴德纯[1] 刘坤[1] 杜广煜[1] 

机构地区：[1]东北大学机械及自动化学院,沈阳110004

出　　处：《真空科学与技术学报》2016年第5期529-533,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金资助项目(50704012);辽宁省博士启动基金资助基金(20061017)

摘　　要：AlO_x薄膜作为高效太阳能电池中P层钝化薄膜引起了光伏龙头企业的关注。本文利用最新研发的微波等离子增强化学气相沉积(MW-PECVD)系统,在单晶硅基体上用不同微波功率和生长温度制备氧化铝膜层样品,并通过扫描电镜、SE800椭偏仪和WT2000少子寿命测量仪对薄膜的成分、表面形貌、厚度、沉积速度、钝化性能进行分析。实验结果表明,LMW-PECVD制备的AlO_x薄膜沉积速度快且薄膜质量高,适用于大规模企业生产。此外,微波功率和生长温度都对AlO_x薄膜的钝化性能有着显著的影响。The AlOxcoatings,grown by microwave plasma enhanced chemical vapor deposition（ MW-PECVD）on substrate of p-type Si wafer for fabrication of high efficiency solar cells on industrial scale,were passivated. The impact of the microwave power,substrate temperature,deposition-rate and film thickness,on the microstructures and properties of the AlOxcoatings was investigated with scanning electron microscopy,ellipsometry and measurement of the minority carrier lifetime（ WT2000）. The results show that MW-PECVD is capable of synthesizing high quality AlOxcoatings at a fast deposition-rate on industrial scale. For example,as the microwave power increased,the deposition-rate rapidly increased to 101 nm / min till 1200 W,and then remained almost unchanged;as the temperature increased,the deposition-rate changed in an increase-decrease mode,peaking at 350℃. Deposited at a power in1200 ~ 1300 W range and at 400℃,the minority carrier lifetime of the AlOx/ Si,with film thicker than 25 nm,was up to 160 μs.

关 键 词：线性微波化学气相沉积 氧化铝薄膜 少子寿命 微波功率 温度 

分 类 号：O484[理学—固体物理] TB43[理学—物理]