6-18 GHz宽带驱动放大器的研制  

Design of a 6-18 GHz Broadband Driver Amplifier

作　　者：李远鹏[1] 赵炳忠[2] 魏洪涛[1] 刘永强[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]渤海石油职业学院,河北沧州062552

出　　处：《半导体技术》2016年第6期425-428,480,共5页Semiconductor Technology

摘　　要：基于GaAs PHEMT工艺,设计制作了6-18 GHz驱动放大器单片电路。电路采用三级放大器拓扑结构,＋5 V单电源供电。第一级采用负反馈电路结构,级间采用有耗匹配结构实现工作带宽。为了实现较高的工作效率,对输出级器件进行了负载牵引仿真,确定了输出级器件的静态工作点和匹配结构。测试结果表明,在6-18 GHz,增益大于18 d B,输入输出回波损耗小于-10 d B,1 d B压缩点功率输出功率大于21 d Bm,饱和功率大于24 d Bm,功率附加效率大于25%,芯片尺寸为1.35 mm×1.00 mm。该电路具有频带宽、效率高、尺寸小等特点,可用于多种小型封装产品,具有广泛的应用前景。A 6-18 GHz driving amplifier monolithic circuit was designed and manufactured based on the GaAs PHEMT process. Three-stage amplifier topology structure and ＋5 V single power supply were adopted in the circuit. Negative feedback network was used in the first stage, and the lossy matching network was used in the inter-stage to realize the bandwidth. In order to achieve higher efficiency, the quiescent operating point and output matching network of the final stage were determined by loadpull simulation. Measurement results show that, in the frequency range of 6-18 GHz, the gain is larger than 18 dB, input and output return loss is less than - 10 dB, the output power is larger than 21 dBm at the 1 dB compression point, the saturation power is larger than 24 dBm, the efficiency is larger than 25%. The chip size is 1.35 mm×1.00 mm. The circuit has some advantages such as wide band, high efficiency, small size, and so on. The circuit can be used for various small packaging products, and has widespread application prospect.

关 键 词：GAAS 宽带 效率 驱动放大器 赝配高电子迁移率晶体管(PHEMT) 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75