大功率短波长InAlGaAs/AlGaAs量子点超辐射发光管  

High-power Short-wavelength InAlGaAs/AlGaAs Quantum-dot Superluminescent Diodes

作　　者：王飞飞[1] 李新坤[2] 梁德春[2] 金鹏[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,低维半导体材料与器件北京市重点实验室,北京100083 [2]北京航天控制仪器研究所,北京100039

出　　处：《发光学报》2016年第6期706-710,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61274072,61306087);“863”国家高技术研究发展计划(2013AA014201)资助项目

摘　　要：为了满足超辐射发光管的短波长应用,采用InAlGaAs/AlGaAs量子点有源区和干法刻蚀工艺制备了短波长弯曲波导超辐射发光管。在1.6A脉冲电流注入下,器件峰值输出功率为29mW,中心波长为880nm,光谱半高宽为20.3nm。比较了干法刻蚀工艺和湿法腐蚀工艺对超辐射发光管器件性能的影响。在1.6A脉冲电流注入下,湿法腐蚀制备的器件峰值输出功率仅为7mW。与湿法腐蚀相比,干法刻蚀可以精确控制波导形状和参数,降低波导损耗,有效增大器件输出功率。In order to meet the short-wavelength applications of the superluminescent diodes,a bentwaveguide superluminescent diode was fabricated by using InAlGaAs/AlGaAs quantum-dot active region and dry etching process. The peak output power up to 29 m W with the wavelength centered at880 nm and the full-width at half-maximum of 20. 3 nm were obtained. Also the influences of wet etching and dry etching on the device properties were compared. At 1. 6 A pulsed current injection,the peak output power of the device fabricated by wet etching is only 7 mW. Compared with wet etching,dry etching can precisely control the shape and parameters of the waveguide,leading to smaller waveguide loss and higher output power.

关 键 词：超辐射发光管 自组织量子点 干法刻蚀 

分 类 号：TN383[电子电信—物理电子学]