一种新型CMOS器件长期贮存寿命评价试验方法  

A New Evaluation Test for Long Storage Life of CMOS Component

作　　者：刘士全[1] 徐超[1] 秦晨飞[1] 王健军[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2016年第6期36-38,47,共4页Electronics & Packaging

摘　　要：介绍了一种新型的可对CMOS元器件长期贮存寿命做出评价的试验方法。对CMOS元器件样品分别进行常温贮存试验和高温贮存试验,通过常温贮存试验累积试验数据,并以此研究总结CMOS元器件长期贮存性能参数变化的规律,通过高温贮存试验加速元器件常温贮存过程,在实验过程中定期对样品器件进行测试。通过对常温贮存数据和高温加速贮存数据进行比对分析,并利用阿伦尼斯模型进行数据处理,从而在较短的时间内对元器件长期贮存寿命做出评价。The article introduces a new test method that it can evaluate the long storage life of the CMOS component in short time. Room temperature storage test and high temperature test are performed using the samples of CMOS component,respectively. The room temperature storage test is used to accumulate the data to analyze the changes of the CMOS long storage performance. And the high temperature storage test is used to accelerate the process. Periodic tests are performed during the experiment. By comparing the data and using Arrhenius relationship, the long storage life of CMOS component can be evaluated in short time.

关 键 词：CMOS器件 长期贮存 试验方法 数据处理 

分 类 号：TN306[电子电信—物理电子学]