阳极键合应力的原位拉曼光谱研究  

In situ Raman Spectroscopic Study on Anodic Bonding Stress

作　　者：明小祥 唐佳丽[1] 于新海[1] 

机构地区：[1]华东理工大学承压系统与安全教育部重点实验室,上海200237

出　　处：《华东理工大学学报（自然科学版）》2016年第3期363-368,共6页Journal of East China University of Science and Technology

摘　　要：介绍了一种基于原位激光拉曼光谱的阳极键合应力研究方法。通过自制的小型阳极键合装置,结合激光拉曼光谱仪,原位研究了在阳极键合升温、通电和降温过程中硅界面应力的演变过程。升温过程中单晶硅的拉曼峰位会向低波数移动,通电恒温键合过程中氧化硅的生长会在单晶硅界面引入拉应力,降温过程中单晶硅界面的应力状态发生从拉应力到压应力的转变。界面的氧化过程对阳极键合结构界面的应力状态有重要影响。A research method based on Raman spectroscopy was introduced to study anodic bonding stress. A self-developed miniaturized anodic bonding device coupled with the Raman spectrometer was used to monitor the stress evolution in the anodic bonding processes, including heating, charge process and cooling. In the heating process,the position of Raman peak of silicon moved towards lower wave number, and the silicon oxidation in the real bonding process brought tensile stress in the silicon near the interface. In the cooling process, the stress state of silicon interface changed from tensile to compressive stress. Therefore,oxidation in the second period of anodic bonding had a significant influence on the stress state of the interface.

关 键 词：阳极键合 拉曼光谱 应力 原位 

分 类 号：TH11[机械工程—机械设计及理论]