束流对氢离子源辅助磁控溅射制备a-Si:H薄膜结构特性的影响  

Synthesis and Characterization of Microstructures of Hydrogenated Amorphous Silicon by Ion Beam Assisted Sputtering

作　　者：黄俊俊[1,2,3] 王辉 丁明[1] 周守发 李梦雨[1] 刘琦[1] 高敏[1] 王维燕[4] 

机构地区：[1]化学与材料工程系合肥学院,合肥230601 [2]合肥乐凯科技产业有限公司,合肥230041 [3]中国科学院能量转换材料重点实验室,合肥230601 [4]宁波材料技术与工程研究所中国科学院大学,宁波315201

出　　处：《真空科学与技术学报》2016年第6期654-658,共5页Chinese Journal of Vacuum Science and Technology

基　　金：安徽省教育厅一般项目(KJ2015B1105905);中国科学院能量转换材料重点实验室开放课题基金(KF2016001)资助

摘　　要：利用氢离子源辅助磁控溅射制备氢化非晶硅薄膜(a-Si:H),借助拉曼光谱仪、红外光谱仪和椭圆偏振光谱仪等分析测试手段,研究氢离子源束流对a-Si:H薄膜结构特性影响规律。结果表明采用氢离子源辅助磁控溅射制备a-Si:H薄膜,有利于改善a-Si:H薄膜结构特性;当离子源束流为5 mA时,薄膜的结构特性最优,a-Si:H薄膜在0.8 eV处的吸收系数、氢含量、微结构因子和光学带隙分别是0.7 cm^(-1)、10.2%(原子比)、0.47和2.02 eV。表明采用氢离子源辅助磁控溅射制备a-Si:H薄膜满足器件要求。The deviee-grade, hydrogenated amorphous silicon （a-Si：H） thin films were synthesized by ion beam assisted magnetron sputtering, on substrates of glass and Si wafer. The effect of the hydrogen ion current on the microstructures of the a-Si：H thin films was investigated with Raman spectroscopy, Fourier transform infrared spec- troscopy, and spectroscopic ellipsometry. The results show that the hydrogen ion current has a major impact on the microstructure factor and density of defect. To be specific, as the ion current increased from O. 0 to 25 mA, the mi- crostructure factor of the a-Si ： H thin films changed in an decrease-increase mode,being minimized at a ion current of 5 mA. Deposited at 5 mA, the a-Si ： H thin films with a lowest density of defect state, displayed the properties, in- cluding a sub-bandgap absorption coefficient of 0. 7 cm-1 at 0. 8 eV, a surface hydrogen density of 10. 2% （ at）, a microstructure factor of 0. 47 and an optical band gap of 2. 02 eV.

关 键 词：离子源辅助溅射 非晶硅薄膜 结构性能 束流 

分 类 号：O484[理学—固体物理]