基于TCAD的SRAM单粒子效应研究  

Analysis of Single Event Effect on SRAM Based on TCAD Simulation

作　　者：逯中岳 周婉婷[1] 

机构地区：[1]电子科技大学电子科学技术研究院,成都611731

出　　处：《半导体光电》2016年第3期349-352,357,共5页Semiconductor Optoelectronics

摘　　要：针对40nm体硅工艺利用TCAD(Technology Computer Aided Design)对关键NMOS进行3D建模,采用混合仿真模型对SRAM单粒子效应进行模拟仿真。通过改变重离子LET(Linear Energy Transfer)值、入射位置和入射角度,分析了其对单粒子效应的影响。实验结果表明40nm工艺下单粒子效应各参数的变化与传统工艺一致。最后,基于R-C简化混合仿真模型,相比于混合仿真模型其电压、电流等参数具有较好一致性,验证了该模型对SRAM单粒子效应模拟的有效性。Based on TCAD（Technology Computer Aided Design）,single event effect of SRAM was simulated by using mixed-mode simulation module of heavy ion,in which the key NMOS is modeled in 3Dfor commercial 40 nm technology.Analyzing of the influence of several important heavy ion incidence factors,the linear energy transfer（LET）,the incidence location and the incidence angle were executed.The results indicate that the variation of key parameters in40 nm technology matches well with that in traditional technology.Moreover,the simplified R-C mixed-mode simulation module was proposed.Two modules were compared and showed good matching in each node of the voltage and current.So it is valid to use this module to analysis the single event effect of SRAM.

关 键 词：TCAD SRAM 线性能量转移 重离子 单粒子效应 

分 类 号：O572.2[理学—粒子物理与原子核物理]