硼掺杂硅翘曲对微加速度计灵敏度的影响  

Effects of Buckling of Boron Doped Silicon on the Sensitivity of Micro Accelerometer

作　　者：彭倍[1] 周吴[1] 李伦[1] 于慧君[1] 彭鹏[1] 何晓平[2] 

机构地区：[1]电子科技大学机械电子工程学院,成都611731 [2]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《电子科技大学学报》2016年第4期696-700,共5页Journal of University of Electronic Science and Technology of China

基　　金：国家自然科学基金(U1530132;51505068;51575090);中央高校基本科研业务费专项资金(ZYGX2015J085;ZYGX2014Z004)

摘　　要：研究了硼掺杂引起的结构翘曲量对微加速度计性能的影响,获取指导微加速度计设计更为准确的物理模型。通过解析计算,结合有限元仿真及实验等方法,研究了不同硼扩散深度对微加速度计灵敏度的影响,得出了不同掺杂状态下微加速度计灵敏度与结构翘曲量之间的关系表达式。理论分析与测试结果表明,考虑翘曲变形的微加速度计的灵敏度比无翘曲时的微加速度计灵敏度减小了约5 m V/g,而当硼扩散深度从90μm变化到120μm时,灵敏度变化量约为2 m V/g。硼掺杂引起的翘曲变形使微加速度计的灵敏度降低,且随着扩散深度增加,灵敏度增大。In order to obtain a more accurate physical model for a micro accelerometer, the influence of the structural buckling deformation caused by boron doping on the performance of the sensor was studied in this paper. The sensitivity of the accelerometer with different doping states was investigated combined with analytical calculation, finite element simulation and experimental method. The analytic expression of sensitivity of the accelerometer with different doping states was obtained. Both the theoretical and experimental results indicate that the sensitivity of the accelerometer with boron doping is about 5 mV/g less than that of the accelerometer without boron doping, and the sensitivity varies by about 2 mV/g when the boron diffusion depth changed from 90 μm to 120 μm. The sensitivity of the accelerometer will decrease when considering the buckling deformation caused by boron doping, and the sensitivity increases with the increasing diffusion depth.

关 键 词：硼掺杂 翘曲 微加速度计 灵敏度 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]