掺杂浓度对AZO薄膜光电性能的影响及其在硅基薄膜太阳电池中的应用  

IMPACTS OF ALUMINUM DOPING COMPOSITIONS ON ZINC OXIDE THIN FILM PROPERTIES FOR PHOTOVOLTAIC APPLICATIONS

作　　者：代玲玲 陈光羽 何延如 谷士斌 张林 赵冠超 杨荣 孟原 李立伟 郭铁 

机构地区：[1]新奥光伏能源有限公司煤基低碳能源国家重点实验室,廊坊065001

出　　处：《太阳能学报》2016年第7期1726-1731,共6页Acta Energiae Solaris Sinica

基　　金：基金项目:新型太阳能电池用透明导电玻璃材料及工艺的联合研发(2010DFB60120)

摘　　要：以磁控溅射法制备Zn O∶Al(AZO)薄膜,研究掺杂浓度及衬底温度对AZO薄膜光电性能的影响。在AZO薄膜光电性能研究优化的基础上,以Al含量为1.6%at.(1%wt.)及3.1%at.(2%at.)的AZO薄膜为前电极制备双结硅基薄膜太阳电池。与业界普遍采用的1%wt.AZO薄膜相比,适度重掺杂(2%wt.)的AZO薄膜由于带隙拓宽可以取得更优的透过率,同时电阻率的优化在更低衬底温度下取得,因此,2%wt.AZO薄膜电池不仅可实现AZO薄膜的低温沉积,而且电池具有较高的转换效率。Magnetron sputtering processes were optimized using ZnO targets with different doping compositions （0.8-4.7%at.） of aluminum. Investigations were performed to evaluate effects of different compositions on film electrical and optical properties. Moderately Al-doped ZnO shows lowest electrical resistivity, due to combined effects of carrier concentration and mobility. However, with the increase of Al composition, the substrate temperature of AZO sputtering tends to reduce to achieve optimized electrical resistivity. Meanwhile, doping of Al leads to favorable blue shift of absorption edge, and also unfavorable transmittance reduction due to enhanced free carrier absorption. 1.6% at. and 3.1% at. AZO films were textured and applied to a-Si ： H/μc-Si ： H tandem silicon thin-film solar cells as front electrodes. Slightly higher （0.35%） initial efficiency has been obtained with 3.1%at. AZO sputtered at lower substrate temperature.

关 键 词：AZO薄膜 磁控溅射 掺杂浓度 硅基薄膜电池 

分 类 号：TK514[动力工程及工程热物理—热能工程]