SiC MOSFET栅极电容提取实验方法及影响因素研究  

A Si C MOSFET Gate Capacitance Extraction Method and Influence Factors Research

作　　者：李辉[1] 廖兴林[1] 曾正[1] 邵伟华[1] 胡姚刚[1] 肖洪伟[1] 刘海涛[1] 

机构地区：[1]输配电装备及系统安全与新技术国家重点实验室(重庆大学),重庆市沙坪坝区400044

出　　处：《中国电机工程学报》2016年第15期4224-4231,共8页Proceedings of the CSEE

基　　金：国家自然科学基金项目(51377184);国际科技合作专项资助(2013DFG61520);中央高校基本科研业务费专项基金项目(106112016CDJZR158802)~~

摘　　要：SiC MOSFET与Si MOSFET由于和IGBT具有很好的兼容性发展尤其迅速,但又因缺乏栅极电容CGS和COX参数提取的有效手段,影响了其性能评价、模型仿真以及应用水平的提高。该文在分析Si C MOSFET典型的电阻负载电路基础上,针对其导通过程中栅极电流变化会带来栅极电容CGS和COX计算上的困难,提出增加恒流源电路维持Si C MOSFET导通过程栅极驱动电流恒定,从而只需简单计算便可提取栅极电容CGS和COX参数的实验方法。针对某一型号具体器件进行了参数提取实验,所得到的结果与datasheet的结果较吻合,验证了该方法的有效性;另外,不同负载、环境温度对采用文中方法得到的栅极电容CGS和COX结果影响较小,而不同直流电压对栅极电容CGS结果影响较大,较高直流电压下参数提取的结果较稳定。The use of SiC MOSFET is now rapidly growing because of its good compatibility with the Si MOSFET and IGBT. However, the absence of effective methods to extract its gate capacitance parameters, such as Cos and Cox, limits the performance evaluations and simulator models, and restricts the development of the device application level. Based on a typical resistive load circuit, an experimental method was presented for measuring gate capacitances, which could resolve the difficulties in calculating the gate capacitances due to gate current variation during the turn-on transient state. The proposed method could maintain the gate current constant during the turn-on transient state and only required a simple calculation. The comparisons between the experiment data and datasheet results show a good agreement, which prove the validity of the presented method. In addition, the results under different loads and temperatures exhibit good consistency, which are different under different DC voltage. The results are also more stable at a higher DC voltage.

关 键 词：SIC MOSFET 栅极电容 参数提取 恒流源电路 

分 类 号：TM46[电气工程—电器]