不同温度下砷化镓表面摩擦诱导选择性刻蚀特性研究  

Friction-Induced Selective Etching of GaAs Surface at Elevated Temperatures

作　　者：高健[1] 余丙军[1] 金晨宁 肖晨[1] 钱林茂[1] 

机构地区：[1]西南交通大学机械工程学院摩擦学研究所,四川成都610031

出　　处：《摩擦学学报》2016年第4期475-480,共6页Tribology

基　　金：国家自然科学基金(51305365);高等学校博士学科点专项科研基金(20130184120008);中央高校基本科研业务费专项资金(2682015CX037)资助~~

摘　　要：利用摩擦诱导选择性刻蚀的方法,可在砷化镓表面加工一系列的纳米结构;该纳米加工方法无需掩膜,且加工效率高、成本低,具有应用前景.为了进一步研究砷化镓表面摩擦诱导选择性刻蚀的特性,优化加工参数,本文作者在不同温度下利用H_2SO_4-H_2O_2溶液对砷化镓表面进行选择性刻蚀,考察了刻蚀后所形成的凸起高度及砷化镓表面粗糙度随刻蚀时间和刻蚀温度的变化规律,阐释了温度对砷化镓表面刻蚀的影响机制;最后从加工高度和表面粗糙度着眼,探讨了砷化镓表面摩擦诱导选择性刻蚀的最佳条件.本研究为砷化镓表面选择性刻蚀加工的条件优化提供了重要依据.A series of nanostructures can be produced on gallium arsenide（GaAs） surface by friction-induced selective etching method. The nanofabrication method can be realized without any templates such as the photomasks. It is a promising method with the advantages of high processing efficiency and low cost. This paper aims to further study the performance of this friction-induced selective etching and optimize the processing parameters through investigating the influences of etching temperature on the etching process of GaAs surface. The variation of the nanostructure height and surface roughness on GaAs surface created by the post-etching was comparatively studied under elevated etching temperatures in a H_2SO_4-H_2O_2 solution. The mechanism for the temperature-dependent etching was interpreted. Finally,the optimized etching condition was addressed taking into account surface roughness and nanostructure height. The present study provides the guidance for selecting the parameters for processing by friction-induced selective etching on GaAs surface.

关 键 词：摩擦诱导选择性刻蚀 温度 砷化镓 AFM 

分 类 号：TH117.1[机械工程—机械设计及理论] TB321[一般工业技术—材料科学与工程]