MPCVD生长半导体金刚石材料的研究现状  

Research Status of the Semiconductor Diamond Materials Grown by the MPCVD

作　　者：付方彬 金鹏[1,2] 刘雅丽[1,2] 龚猛[1,2] 吴巨[1,2] 王占国[1,2] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083 [2]中国科学院半导体研究所低维半导体材料与器件北京市重点实验室,北京100083

出　　处：《微纳电子技术》2016年第9期571-581,587,共12页Micronanoelectronic Technology

基　　金：北京市科技计划项目(Z151100003315024)

摘　　要：简要介绍了半导体金刚石材料优异的电学和光学性质、主要制备方法以及采用微波等离子体化学气相沉积(MPCVD)技术在制备高质量半导体金刚石材料方面的优势。重点就MPCVD技术在半导体金刚石材料的高速率生长、大尺寸生长、高质量生长以及电学掺杂等四个方面的研究现状进行了详细总结。详细探讨了目前半导体金刚石材料在大尺寸单晶金刚石衬底制备、高质量单晶金刚石外延层生长以及金刚石电学掺杂等方面还存在的一些基本问题。指出在大面积单晶金刚石衬底还没有实现突破的情况下,半导体金刚石材料和器件结构的生长模式。The excellent electrical and optical properties and main preparation methods of the semiconductor diamond materials are briefly introduced,and the significant advantages of the microwave plasma chemical vapor deposition（MPCVD）technology for the preparation of high quality semiconductor diamond materials are presented.And then,the research status of the semiconductor diamond materials grown by the MPCVD technology is emphatically reviewed in detail from the four aspects of the high rate growth,large size growth,high quality growth and electrical doping.Besides,some basic issues of the semiconductor diamond materials are discussed in detail from the following aspects,i.e.the preparation of the large-size single crystal diamond,epitaxial layer growth of the high quality single crystal diamond and electrical doping of the diamond.Finally,the growth modes of the semiconductor diamond materials and device structures are pointed out in the case that there is no significant improvement in the single crystal diamond substrates with the relatively large area.

关 键 词：金刚石 宽禁带 微波等离子体化学气相沉积(MPCVD) 同质外延生长 掺杂 

分 类 号：TN304.18[电子电信—物理电子学] TN304.054