650V/50A 4H-SiC JBS二极管的设计与验证  

Design and Verfication of a 650V/50A 4H-SiC JBS Diode

作　　者：马骏[1] 王曦[2] 蒲红斌[2] 陈治明[2] 

机构地区：[1]西安电力电子技术研究所,陕西西安710061 [2]西安理工大学自动化与信息工程学院,陕西西安710048

出　　处：《电力电子技术》2016年第8期101-102,108,共3页Power Electronics

基　　金：陕西省科技统筹创新工程计划项目(2013KTCQ01-09)~~

摘　　要：对肖特基区宽度不同的4H-碳化硅(SiC)结势垒肖特基(JBS)二极管进行了仿真与实验研究。根据研究结果设计了一款兼具高功率处理能力与超低漏电流的4H-SiC JBS二极管并进行实验验证。实验结果显示所设计器件通态电阻为36 mΩ,反向耐压650 V时漏电流小于10 nA,功率处理能力大于30 kVA。The article carries out the simulation and experimental research on 4H-silicon-earbide （SIC） junction barrier Schottky（JBS） diode for different width of schottky area.According to the research resutts,a 4H-SiC JBS diode with both high power handling capacity and low leakage current is designed and; verified by experiments.The experimental results show that the on-state resistance of the device, which is designed by the article,is only 36 mΩ.The leakage current is less than 10 nA withstand the reverse voltage of 650 V.The power handling capacity is greater than 30 kVA：

关 键 词：二极管 结势垒肖特基 大功率 

分 类 号：TN111[电子电信—物理电子学]