GaAs/AlGaAs双量子阱实空间转移效应模拟与实验  

Simulation and experience of realspace transfer effect in GaAs/AlGaAs double quantum well

作　　者：余成章[1,2] 靳川[1] 白治中[1] 陈建新[1] 

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]上海科技大学物质科学与技术学院,上海201210

出　　处：《红外与毫米波学报》2016年第4期407-411,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61176082;61290302;61534006)~~

摘　　要：用投掷法和有限元差分法计算了单周期调制掺杂GaAs/AlGaAs双量子阱的能带结构,得到基态能级与第一激发态的能级差为43.3 meV,并由此推算得到产生载流子横向转移效应的电场强度为1.2～1.8 k V/cm之间.采用MBE技术生长了所涉及的双量子阱结构,通过优化退火条件,获得了较理想的金属—半导体接触条件.在此基础上,测得在电场强度为1.5 k V/cm时,电流—电压曲线呈现出负阻特性.该电场强度区别于GaAs耿氏效应的电场强度,由此判定,产生微分负阻的机理是电子由高迁移率导电层到低迁移率导电层的横向转移所致,即实空间转移.The band structure of a GaAs/A1GaAs double quantum well was calculated via shooting method and finite element method. The energy needed for a ground-excited state transition is 43.3 meV, indicating that a 1. 2 to 1.8 kV/cm electric field can cause a horizontal transfer of carriers. The designed double quantum well structure was grown by MBE. Good metal-semiconductor contact was obtained via optimizing annealing conditions. The negative resistance effect was obtained in a 1.5 kV/cm parallel electric field, which is differs from the electric field for GaAs Gunn effect. It was concluded that the mechanism for negative resistance effect is electrons transfer from high mobility layer to low mobility layer, namely real space transfer（RST）.

关 键 词：GAAS/ALGAAS 微分负阻效应 实空间转移 

分 类 号：O472.4[理学—半导体物理]