InGaAsP器件质子位移损伤等效性研究  

Displacement Damage Equivalence for Proton in InGaAsP Device

作　　者：黄绍艳[1] 刘敏波[1] 郭晓强[1] 肖志刚[1] 盛江坤 王祖军[1] 姚志斌[1] 何宝平[1] 唐本奇[1] 

机构地区：[1]西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室,陕西西安710024

出　　处：《原子能科学技术》2016年第9期1701-1705,共5页Atomic Energy Science and Technology

摘　　要：对基于非电离能量损耗(NIEL)的位移损伤等效性研究方法进行了讨论,计算了不同能量质子在InGaAsP材料中的NIEL。利用解析方法对库仑散射引起的NIEL进行了计算,分析了不同库仑散射模型的适用范围,并利用Monte-Carlo方法对核反应引起的NIEL进行了计算。以InGaAsP多量子阱激光二极管为研究对象,开展了4、5和8 MeV质子辐照实验,获得了激光二极管的阈值电流损伤系数。研究结果表明:实验用不同能量质子辐射环境下的阈值电流损伤系数测试结果与NIEL理论计算结果之间呈线性关系。The displacement damage equivalence based on nonionizing energy loss（NIEL）was discussed.The NIEL in InGaAsP induced by proton with different energy was calculated.The Coulomb scattering NIEL was calculated by analytical method and the applicability of different Coulomb scattering models was discussed.The nuclear reaction NIEL was simulated by Monte-Carlo method.InGaAsP multi-quantum well laser diodes were selected and irradiated by 4,5,8 MeV protons to obtain threshold current damage factor.The results show that the threshold current damage factor experimentally obtained from proton with different energy is linear with NIEL calculation result.

关 键 词：INGAASP NIEL 位移损伤 等效性 

分 类 号：TN248.8[电子电信—物理电子学]