Effect of In_xGa_(1-x)As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-Ⅱ Quantum Dots Grown on InP (100) Substrates  

作　　者：陈虞龙 高优 陈弘 张辉 何苗 李述体 郑树文 

机构地区：[1]Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices,Institute of Opto-Electronic Materials and Technology,South China Normal University [2]Key Laboratory for Renewable Energy,Chinese Academy of Sciences,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condense Matter Physics,Institute of Physics,Chinese Academy of Sciences [3]College of Physics and Optoelectric Engineering,Guangdong University of Technology

出　　处：《Chinese Physics Letters》2016年第9期120-123,共4页中国物理快报（英文版）

基　　金：Supported by the Science and Technology Planning Projects of Guangdong Province under Grant Nos 2014B050505020,2015B010114007 and 2014B090904045;the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20134407110008;the Guangzhou Science and Technology Project of Guangdong Province under Grant No 2016201604030027;the Zhongshan Science and Technology Project of Guangdong Province under Grant No 2013B3FC0003

摘　　要：The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots （QDs） system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence （PL） spectra of GaSb/InGaAs QDs at 8 K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition. The PL spectra at 8 K under an excitation power of 90row show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots （QDs） system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence （PL） spectra of GaSb/InGaAs QDs at 8 K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition. The PL spectra at 8 K under an excitation power of 90row show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.

关 键 词：INGAAS in it GASB Quantum Dots Grown on InP SUBSTRATES x)As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type of on 

分 类 号：TN304.2[电子电信—物理电子学]