一种新型硅基衬底半绝缘结构的研究  

Research on an Advanced Semi-Insulation Structure Based on Silicon Substrate

作　　者：马奎[1,2] 杨发顺[1,2] Ma Kui Yang Fashun(Department of Electronics, Guizhou University, Guiyang 550025, China Key Laboratory of Micro-Nano Technology of Guizhou Province, Guiyang 550025, China)

机构地区：[1]贵州大学电子科学系,贵阳550025 [2]贵州省微纳电子技术与软件技术重点实验室,贵阳550025

出　　处：《半导体技术》2016年第10期740-745,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61464002);贵州省科学技术基金资助项目(黔科合J字[2014]2066号);贵州大学博士基金资助项目(贵大人基合字(2013)20号);贵州省重点实验室开放基金资助项目(KFJJ201503)

摘　　要：在单晶硅衬底上,通过三次外延和两次选择性掺杂,实现了一种新型的半绝缘结构。其中有一个隔离岛和衬底之间是非绝缘的,将纵向器件制作在此隔离岛中将不需要额外的体引出结构。相邻的隔离岛之间可通过反向偏置的pn结进行隔离,也可由填充二氧化硅和非掺杂多晶硅形成的介质隔离槽实现隔离。在外延层中进行多次选择性地掺杂反型杂质,经高温退火后形成夹层,将此夹层引出到硅片表面后偏置在合适的电位即可实现顶层和底层之间的隔离。电参数测试得到外延层和夹层之间形成的pn结的耐压为179 V,介质隔离槽的耐压为138 V。SEM图像显示介质隔离槽得到很好地实现。On monocrystal silicon substrate,an advanced semi-insulation structure which employed multi-epitaxy and selectively multi-doping process was proposed. An isolated island in it is connected to the substrate. Therefore,vertical device can be integrated without extra internal interconnection structure in a chip. Adjacent isolated islands were insulated by isolation wall or deep dielectric trenches refilled with silicon dioxide and non-doped polysilicon. The top layer can be insulated with the substrate by an inside layer which was biased on the appropriate potential. The inside layer was formed through multitimes selectively doping opposite type of impurity in the epitaxial layer. The theoretical propositions were validated through two-dimensional numerical computer simulations. The test results of breakdown voltage of isolating pn junction and dielectric trench are 179 V and 138 V respectively. The scanning electron microscope（ SEM） test diagram show that the process of dielectric trench is appropriate.

关 键 词：半绝缘 纵向器件 多次外延 多次选择性掺杂 介质隔离槽 

分 类 号：TB383[一般工业技术—材料科学与工程] TN303[电子电信—物理电子学]