ICP工艺参数对刻蚀Pyrex玻璃影响的实验研究(英文)  

Experimental Study of the Influence of ICP Process Parameters on Etching of Pyrex Glass

作　　者：张迪雅[1,2] 梁庭[1,2] 刘雨涛[1,2] 王涛龙 李旺旺[1,2] 姚宗[1,2] 熊继军[1,2] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051 [2]中北大学电子测试技术国防科技重点实验室,太原030051

出　　处：《传感技术学报》2016年第8期1149-1154,共6页Chinese Journal of Sensors and Actuators

基　　金：National Science Foundation for Distinguished Young Scholars of China(51425505)

摘　　要：影响ICP刻蚀的工艺参数包括反应室压力,偏置射频功率,氩气流量比率。通过正交试验的方法,以CHF3和Ar的混合物作为反应气体,利用电感耦合等离子体技术刻蚀Pyrex玻璃。并采用回归分析方法建立了二次回归方程模型描述腐蚀速率和三个因素之间的关系。实验结果表明,氩气的流量比率(总气体流量(CHF3+Ar)是恒定的)对刻蚀速率的影响最大,影响程度的主次顺序为氩气的流量比率,反应室压力,偏置射频功率。腐蚀速率和三个因素之间的数学表达式为:腐蚀速率=532.680 0+2.055 6×Ar+0.012 7×(偏置射频功率)-0.964 1×压力-0.065 5×Ar2-0.006 7×Ar×(偏置射频功率)+0.021 7×(偏置射频功率)×压力-0.050 4×(压力)2,实验结果证明数学拟合结果良好。The influence of the inductively coupled plasma etching process parameters including reaction chamber pressure,bias RF power and Ar flow rate ratio. By the method of orthogonal experiment,ICP etching technology was used to etch Pyrex glass using a mixture of CHF3 and Ar as the reactant gas sources. The regression analysis meth？od was adopted to build quadratic equation model describing the relationship between etching rate and three fac？tors. Experimental results demonstrated the influence of Ar rate ratio（the total gases flow rate（CHF3＋Ar）was con？stant）on etching rate was highly significant,and the factors affecting the etching rate in descending order was Ar flow rate ratio,reaction chamber pressure and bias RF power. The mathematical expression between etching rate and three factors was Etching rate=532.680 0＋2.055 6 × Ar＋0.012 7 ×（bias RF）-0.964 1 × pressure-0.065 5 × Ar2-0.006 7Ar ×（bias RF）＋0.021 7 ×（bias RF）× pressure-0.050 4 ×（pressure）2,and the verification results confirmed that mathematical fitting was very excellent.

关 键 词：感应耦合等离子刻蚀 Pyrex玻璃 正交试验 刻蚀速率 数学拟合 

分 类 号：TN305[电子电信—物理电子学]