锗/石墨/硅薄膜结构的制备及其性质分析  

Preparation and properties of germanium/graphite/silicon thin film structure

作　　者：牟潇野 陈诺夫[1] 白一鸣[1] 杨博[1] 陶泉丽 陈吉堃 

机构地区：[1]华北电力大学新能源电力国家重点实验室,北京102206 [2]云南临沧鑫圆锗业股份有限公司,昆明650106

出　　处：《功能材料》2015年第B12期192-196,共5页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2011AA050507);国家自然科学基金资助项目(61006050;61076051);北京市自然科学基金资助项目(2151004);中央高校基本科研业务费专项资金资助项目(13ZD05)

摘　　要：利用磁控溅射技术在单晶硅衬底上制备出具有Ge/石墨/Si结构的薄膜样品,然后把其放入快速热退火(RTA)炉中退火。扫描电子显微镜(SEM)测试表明,石墨过渡层的引入缓解了Si、Ge之间的晶格失配和热失配。X射线衍射(XRD)分析表明450℃是Ge薄膜晶化的临界衬底温度,750℃是使Ge薄膜RTA晶化程度明显提高的临界退火温度,30s是最佳退火时间。The thin film samples with the structure of germanium/graphite/silicon were prepared on monocrys- talline silicon substrates by magnetron sputtering technique. Then the samples were annealed in a rapid thermal annealing （RTA） furnace. The scanning electron microscope （SEM） observation shows that the introduction of graphite transition layer alleviates the lattice mismatch and the thermal mismatch between silicon and germani um.X-ray diffraction （XRD） measurements indicate that 450 ℃ is the critical substrate crystallization tempera- ture of germanium film, 750℃ is the critical annealing temperature which increases the RTA crystallization de- gree of Ge film obviously, and 30 seconds is the proximately optimal annealing time.

关 键 词：硅基Ge薄膜 石墨过渡层 衬底温度 快速热退火 

分 类 号：TN304.12[电子电信—物理电子学] TM914.4[电气工程—电力电子与电力传动]