一种基于片上测试系统的AlGaN/GaN HEMT器件大信号建模方法  

A Large-signal Modeling Method for AlGaN/GaN HEMT Using On-wafer Measurement

作　　者：史丽云[1] 沈溧[2] 唐旻[1] 高建军[2] SHI Li-yun SHEN Li TANG Min GAO Jtan-jun(Key Laboratory of Design and Electromagnetic Compatibility of High Speed Electronic Systems of Ministry of Education, Shanghai Jiaotong University, Shanghai 200240, China School of Information and Science Technology, East China Normal University, Shanghai 200241, China)

机构地区：[1]上海交通大学高速电子系统设计与电磁兼容研究教育部重点实验室,上海200240 [2]华东师范大学信息科学技术学院,上海200241

出　　处：《实验室研究与探索》2016年第9期82-85,95,共5页Research and Exploration In Laboratory

基　　金：国家自然科学基金重点项目61234001

摘　　要：AlGaN/GaN材料是目前最吸引人的半导体材料之一。AlGaN/GaN高电子迁移率晶体管（HEMT）器件的建模方法主要基于传统的GaAs FET模型分析方法,未考虑材料本身的新特性。通过使用片上测试系统,结合数值分析方法,提出了一种AlGaN/GaN HEMT器件的大信号模型,该模型中的寄生参数值可通过特殊测试结构和数值优化方法获得,模型中的直流参数可以通过改进传统STATZ直流模型获得,改进后模型的直流参数随着栅-源电压的变化而变化,比传统STATZ模型准确度提高了约10%。实验测量结果表明,在0.1-40GHz的频率范围内,模型参数提取结果与器件测量结果吻合良好。AlGaN/GaN is one of the most attractive semiconductor materials. The modeling method for AlGaN/GaN device is mainly based on the traditional FET Ga As model analysis method,without considering the new characteristics of AlGaN/GaN. A parameter-extraction approach for large-signal model of the AlGaN/GaN HEMTs is proposed in this paper. The values of the parasitic parameters are extracted by using test structure and empirical optimization pracedure.An improved empirical model for the DC characteristics is presented in this paper. The improvement consists in allowing the Statz model paramseters to vary with gate-source voltage. Good agreement is obtained between the modeled and measured results in the frequency range of 0. 1 --40 GHz.

关 键 词：ALGAN/GAN高电子迁移率晶体管 大信号 模型 片上(在片)测试 

分 类 号：TN386[电子电信—物理电子学]