STI场区加固NMOS器件总剂量效应  

Total ionizing dose effect on NMOS transistors with radiation-hard in STI

作　　者：谢儒彬[1] 吴建伟 陈海波[1] 李艳艳[1] 洪根深[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《太赫兹科学与电子信息学报》2016年第5期805-810,共6页Journal of Terahertz Science and Electronic Information Technology

摘　　要：基于0.18μm CMOS工艺开发了浅槽隔离(STI)场区抗总剂量辐射加固技术,采用离子注入技术使STI/衬底界面处的P型硅反型阈值提高,从而增强NMOS器件的抗辐射能力。实验表明,加固NMOS器件在500 krad(Si)剂量点时,阈值电压无明显漂移,漏电流保持在10-12量级,其抗辐射性能明显优于非加固NMOS器件。通过STI场区加固工艺的研究,可有效提高电路的抗总剂量辐射能力,同时避免设计加固造成芯片面积增大的问题。Total Ionizing Dose（TID） radiation-hard technology in Shallow Trench Isolation（STI） is developed based on 0.18μm CMOS process,which raises the threshold of P-type silicon at the STI/ substrate interface by ion implantation technology, and therefore enhances the radiation hardening ability of NMOS transistors. There is no threshold shift of the NMOS transistors after irradiating at 500 krad（Si）. The leakage current keeps at the order of magnitude of 10-12. It has better radiation hardening characteristic compared with the NMOS transistors without radiation-hard. Through the study of TID radiation-hard technology in STI, the radiation hardening ability of circuit can be enhanced. At the same time, this technology will avoid the problem that the area of chip will increase due to the radiation-hard design.

关 键 词：辐射加固 总剂量效应 浅槽隔离 0.18μm 

分 类 号：TN386.1[电子电信—物理电子学]