MCM-D薄膜多层布线工艺技术研究  

Study on Technology of Thin Film Mutli-layer Wiring

作　　者：刘永彪[1] LIU Yong-biao(The 29th Research Institute of CETC, Chengdu 610036, China)

机构地区：[1]西南电子设备研究所,四川成都610036

出　　处：《电子工艺技术》2016年第5期257-259,共3页Electronics Process Technology

摘　　要：薄膜多层布线工艺是三维封装的关键技术之一,具有线条细、精度高和线间距小等优点,而薄膜多层电路相应具有布线密度高、信号传输速度快和高频特性好等优势,在电子领域备受青睐。介绍了薄膜多层布线工艺技术,通过对聚酰亚胺介质膜成型技术、介质膜表面导带形成技术以及通孔柱形成技术的研究,解决了多层布线技术中介质膜"龟裂"、电镀"浮胶"以及通孔接触电阻大或者"断台"等难点问题,实现了3层介质4层电路的高密度布线结构。Thin film mutli-layer technology is the key technology of Three-dimensional packaging It has many advantages such as higher integration, larger wiring density, shorter transmission distance, faster transmission speed, that made it win high reputation in electronics fields. Present process of thin film mutli-layer technology, and solve some problems such as cracking of polyimide medium, electroplating float, open hole, electric band and so on, and implement a high density wiring structure which has three layers of polyimide medium and four layers of circuit.

关 键 词：多层布线 聚酰亚胺 导带 通孔柱 

分 类 号：TN45[电子电信—微电子学与固体电子学]