焊料Sn3.5Ag4Ti(Ce,Ga)与SiO_2基板低温活性焊接机理  

Active Bonding Mechanism Between Sn3.5Ag4Ti(Ce,Ga) and SiO_2 Substrate at Low Temperature

作　　者：成兰仙[1] 李国元[1] 

机构地区：[1]华南理工大学电子与信息学院,广东广州510640

出　　处：《华南理工大学学报（自然科学版）》2016年第9期67-72,共6页Journal of South China University of Technology(Natural Science Edition)

基　　金：广东省科技计划项目(2013B010403003)~~

摘　　要：采用扫描电镜、能谱仪和透射电镜研究了Sn3.5Ag4Ti(Ce,Ga)低温活性焊接SiO_2基板界面的微观形貌和焊接机理,并根据反应热力学和活性元素的吸附理论分析了Sn3.5Ag4Ti(Ce,Ga)与SiO_2基板的焊接机理及焊接动力学过程.实验结果表明,焊接界面由Ti Si和Ti O_2形成.理论分析与实验结果一致表明:Ti元素在SiO_2基板表面的化学吸附可能是实现焊接润湿的主要原因,在焊接的初始阶段发挥重要的作用;Ti与SiO_2之间的界面反应并形成界面产物是实现Sn3.5Ag4Ti(Ce,Ga)与SiO_2基板焊接的主要机理.The interracial microstructure and soldering mechanism of the low-temperature active bonding SiO2 sub- strate with Sn3.5Ag4Ti（ Ce, Ga） alloy filler were investigated by means of SEM, EDX and TEM, and the mecha- nism and dynamic process of the active bonding between Sn3.5Ag4Ti（ Ce, Ga） and SiO2 substrate were analyzed on the basis of the active adsorption and reaction thermodynamics theories. Experiment results show that TiSi and TiO2 phases form along the interface. Both theoretical results and experimental results indicate that the chemical adsorption of Ti on SiO2 substrate interface may be the main reason for wetting and plays an important role in the initial bonding stage, and that the main bonding mechanism of Sn3.5Ag4Ti（ Ce, Ga） and SiO2 substrate can be described as the interfacial reaction between Ti and SiO2 and the forming of correspondent reactants.

关 键 词：低温 活性焊接 界面产物 活性元素 

分 类 号：TG425[金属学及工艺—焊接]