氧化锌系列薄膜体声波谐振器研制与表征  

Fabrication and Characterization of a Zinc-Oxide-Based Film Bulk Acoustic Wave Resonator

作　　者：段力[1] 卢学良[1] 史丽云[1] 王英[1] 付学成[1] 王丹凤[1] 汪军[1] 沈勇[1] 翁昊天 张亚非[1] 

机构地区：[1]上海交通大学电子信息与电气工程学院,上海200240

出　　处：《微纳电子技术》2016年第11期726-730,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(F040801)

摘　　要：研制了一种氧化锌基的固体装配型薄膜体声波谐振器。采用了布拉格反射层为反射基底,以掺镁氧化锌作为压电层,利用MEMS微制造工艺形成了一系列的固体装配型薄膜体声波谐振器。通过优化条件,制备出了具有优良谐振性能的薄膜体声波器件。该谐振器回波损耗可达-20 dB,谐振峰在1.8~2.4 GHz,Q值可达800。利用X射线衍射（XRD）谱研究了MgxZn1-xO压电薄膜的结晶特性,得到了很好的c轴（002）铅锌矿薄膜结构特性。利用3D显微镜观测了固体装配型薄膜体声波谐振器的表面与侧面结构。根据MgxZn1-xO压电层的测量厚度和谐振频率,计算了掺镁氧化锌薄膜体声波谐振器的相位声速值为6 854.1 m/s,比纯氧化锌压电薄膜的声速6 330 m/s略高。A ZnO-based solid mounted film bulk acoustic resonator was designed,fabricated and characterized.A series of solid mounted resonator film bulk acoustic resonators were obtained by the MEMS micro-fabrication processes with the Bragg reflector as the reflect substrate and the Mg-doping ZnO as the piezoelectric layer.The film bulk acoustic resonator with excellent resonance performances was fabricated by optimizing the conditions.The return loss and Qvalue of the resonator can reach-20 dB and800 in the resonance frequency of 1.8-2.4 GHz,respectively.The crystalline characteristic of the MgxZn1-xO piezoelectric film was studied by the X-ray diffraction（XRD）spectrum,and the good structure characteristic of the c-axis（002）lead-zinc film was obtained.The surface and side structures of the solid mounted film bulk acoustic resonator were inspected by the 3D microscopy.According to the measured thickness and resonance frequency of the MgxZn1-xO piezoelectric layer,the calculated phase acoustic speed is6 854.1 m/s for the Mg-doping ZnO film bulk acoustic resonator,which is slightly higher than that of the pure ZnO piezoelectric film（6 330 m/s）.resonator were inspected by the 3D microscopy.According to the measured thickness and resonance frequency of the MgxZn1-xO piezoelectric layer,the calculated phase acoustic speed is6 854.1 m/s for the Mg-doping ZnO film bulk acoustic resonator,which is slightly higher than that of the pure ZnO piezoelectric film（6 330 m/s）.

关 键 词：射频(RF) 薄膜体声波 谐振器 传感器 CMOS集成电路 

分 类 号：TN61[电子电信—电路与系统] TN389