阳极键合强度对高g加速度传感器输出特性影响  

Effects of the Anodic Bonding Strength on the Output Characteristics of the High-g Acceleration Sensor

作　　者：冯恒振 秦丽[1] 石云波[1] 连树仁 孙亚楠[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,太原030051

出　　处：《微纳电子技术》2016年第11期763-766,772,共5页Micronanoelectronic Technology

基　　金：山西省自然科学基金资助项目(2014011021-5)

摘　　要：晶圆键合强度是影响高g MEMS压阻式加速度传感器输出特性的主要因素之一。在200℃,200~800 V条件下完成硅-玻璃阳极键合实验,利用数字拉力机来表征不同参数条件下阳极键合强度,并用Matlab软件对实验数据进行处理,得到键合强度与键合晶圆厚度、键合电压之间的关系曲线;根据键合强度曲线选择最佳阳极键合工艺参数组合,对实验室自研的量程为150 000g的加速度传感器进行硅-玻璃阳极键合和冲击测试。通过分析测试结果,得到使高g压阻式加速度传感器具有较高输出灵敏度的键合参数。The wafer bonding strength is one of the main factors that affect the output characteristics of high-g MEMS piezoresistive acceleration sensors.The silicon-glass anodic bonding experiment was completed under the conditions of 200 ℃and 200-800 V.The anodic bonding strength under different parameters was characterized by the digital tensile machine.The experiment data were processed by the Matlab software,and the relationship curves of the bonding strength,bonding wafer thickness and bonding voltage were obtained.The best anodic bonding process parameters were selected according to the bonding strength curves.In the laboratory,the impact testing was carried out by using the acceleration sensor with the measurement range of150 000 gafter the silicon-glass anodic bonding.By analyzing the testing results,the bonding parameters of the high-gpiezoresistive acceleration sensor with higher output sensitivity were obtained.

关 键 词：阳极键合 键合强度 MEMS加速度传感器 冲击测试 键合参数 

分 类 号：TN305.96[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]