T/R组件功放芯片瞬态温度响应研究  

Studies of Transient Temperature Response of Power Amplifier ICs in T/R Module

作　　者：盛重[1] 周骏[1] 丁晓明[1] 沈亚[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《电子与封装》2016年第10期39-42,共4页Electronics & Packaging

摘　　要：T/R组件的热设计是有源相控阵雷达的核心技术之一。在脉冲周期状态下,T/R组件中的功放芯片在很短的时间内,芯片沟道温度会产生快速的变化。针对芯片在脉冲周期中的瞬态温度响应问题,对芯片沟道温度的瞬态变化进行仿真研究,并利用红外热分析仪进行测试验证。将仿真结果与实验结果进行对比,两者结果吻合较好,满足T/R组件的使用要求。Thermal design of T/R module is one of the key technologies in active phase array radar. In pulse periods, the channel temperature of the power amplifier will change in the T/R module during a short time. In the paper, the transient changing of the channel temperature of the chip is analyzed using thermal simulator software, and the temperature is tested by infrared analyze instrument.The comparison between simulated and tested results shows that the presented designs are valid to T/R modules.

关 键 词：瞬态温度 热仿真 T/R组件 

分 类 号：TG454[金属学及工艺—焊接]