三氟化氯气体合成反应研究  

Study on Synthesis of Chlorine Trifluoride

作　　者：王新喜[1] 刘智慧[1] 黄华瑶[1] 张净普[1] 李丹丹[1] 李翔宇[1] 

机构地区：[1]中国船舶重工集团公司第七一八研究所,河北邯郸056027

出　　处：《舰船防化》2016年第3期13-16,共4页

摘　　要：电子气体三氟化氯在半导体工业中用作清洗气，本文采用氟气与氯气反应，合成出了三氟化氯气体，通过对温度、物料配比、压力、流速等反应条件的筛选试验，选出了最佳的合成条件，最佳的三氟化氯制备条件为：温度：280℃～290℃，压力：0．09MPa～O．11MPa（绝压），氯气流速：0．6L／min～0．8L／min，氟氮混合气（20％）流速：9．0L／min～12．0L／min。合成的三氟化氯的收率达到85％vZZ上，为三氟化氯的工业化生产提供了工艺参数。The electronic gas chlorine trifluoride is used as a cleaning gas in the semiconductor industry.In this paper, chlorinetrifluoride was synthesized by the gas-phase reaction of fuorine and chlorine. By screening test of temperature,equivalenceratio,pressure and flow rate, the optimum synthesis conditions were selected.The optimum temperature and pressure were 280℃-290℃ and 0.09 MPa-0.11MPa respectively, and the optimum flow rates of chlorine and 20% fluorine in nitrogen were 0.6-0.8 L/min and 9.0-12.0 L/min respectively. The yield of chlorine trifluoride was above 85% , and the process parameters were provided for the industrial production of chlorine trifluoride.

关 键 词：氟气 氯气 三氟化氯 合成 

分 类 号：TQ124.3[化学工程—无机化工]