室温生长AZO/Al2O3叠层薄膜晶体管性能研究  

Properties of AZO/Al_2O_3 Stacked Thin Film Transistors Prepared at Room Temperature

作　　者：宁洪龙[1] 曾勇[1] 姚日晖[1] 刘贤哲 陶瑞强 郑泽科[1] 方志强[1] 胡诗犇 陈建秋[1] 蔡炜[1] 徐苗[1] 兰林锋[1] 王磊[1] 彭俊彪[1] 李正操[2] NING Hong-long ZHENG Ze-ke ZENG Yong YAO Ri-hui LIU Xian-zhe TAO Rui-qiang FANG Zhi-qiang HU Shi-ben CHEN Jian-qiu CAI Wei XU Miao LAN Lin-feng WANG Lei PENG Jun-biao LI Zheng-cao(Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China State Key Laboratory of New Ceramic and Fine Processing, Department of Materials Science and Engineering School, Tsinghua University, Beijing 100084, China)

机构地区：[1]华南理工大学材料科学与工程学院,高分子光电材料与器件研究所,发光材料与器件国家重点实验室,广东广州510640 [2]新型陶瓷与精细工艺国家重点实验室(清华大学),北京100084

出　　处：《发光学报》2016年第11期1372-1377,共6页Chinese Journal of Luminescence

基　　金：国家重点基础研究发展计划(973)(2015CB655004);国家重点研发计划(2016YFB0401504,2016YFF0203603);广东省自然科学基金(2016A030313459);广东省科技计划(2014B090915004,2016B090907001,2014A040401014,2016B090906002,2015A010101323,2014B090916002,2015A010101323,2015B090915001,2015B090914003);广东省教育厅项目(2014KZDXM010,2015KTSCX003);中央高校基本科研业务费专项资金(2015ZP024,2015ZZ063);新型陶瓷与精细工艺国家重点实验室开放课题(KF201508)资助项目

摘　　要：针对目前大多数氧化物薄膜晶体管都需要采用热退火工艺来提高其性能不利于其在柔性显示器件中应用这一问题,提出了一种采用室温工艺制备的新型TFT器件,无需退火处理即可获得较好的器件性能。该器件采用脉冲激光沉积技术制备的AZO/Al_2O_3叠层结构作为沟道层。与单层AZO-TFT器件相比,叠层TFT器件具有更优异的性能,其迁移率为2.27 cm2·V-1·s-1,开关比为1.43×106。通过对AZO/Al_2O_3叠层薄膜的厚度、密度、粗糙度、物相、界面特性及能带结构等进行分析,发现这种叠层结构能够使电子的运动被限制在AZO薄膜平面内,即形成了二维电子传输,从而提升TFT器件的性能。Most of the oxide thin film transistor（ TFT） need thermal annealing process to improve its performance,which is detrimental to their applications in the flexible display devices. Concerning this problem,a new TFT structure with room temperature process was presented,which has good performance without annealing treatment. AZO / Al2O3 stacked thin film was prepared by pulsed laser deposition as a channel layer. The stacked TFT showed better performance than single-layer AZOTFT. The field effect mobility and on / off current ratio were 2. 27 cm^2·V^- 1·s^- 1and 1. 43 × 10^6.By analyzing the thickness,density,roughness,phase and band structure of AZO / Al2O3 stackedthin film,it is found that the electrons can be confined in the potential well of AZO,which forms a two-dimensional electron transport to improve the performance of TFT device.

关 键 词：叠层薄膜晶体管 室温工艺 二维电子传输 

分 类 号：TN321.5[电子电信—物理电子学]