Cu互连中V、V-N和V/V-N薄膜的扩散阻挡性能  

Diffusion Barrier Performances of V,V-N and V/V-N Films in Cu Interconnection

作　　者：王翠萍[1] 戴拖 卢勇[1] 施展[1] 张锦彬[1] 刘兴军[1] 

机构地区：[1]厦门大学材料学院,福建厦门361005

出　　处：《厦门大学学报（自然科学版）》2016年第6期810-814,共5页Journal of Xiamen University：Natural Science

基　　金：国家自然科学基金(51571168);国家自然科学基金青年基金(51301146);科技部国际科技合作专项(2014DFA53040)

摘　　要：采用磁控溅射法在Si（100）基板上沉积厚度为50nm的V、V-N和V/V-N扩散阻挡层,并在扩散阻挡层上制备了厚度为300nm的Cu薄膜,最终获得了Cu/V/Si、Cu/V-N/Si和Cu/V/V-N/Si 3种多层薄膜.薄膜样品在300-750℃真空热处理1h后,通过X射线衍射（XRD）仪、扫描电子显微镜（SEM）和四探针电阻测试（FPP）仪对薄膜样品的晶体结构、微观组织形貌和方块电阻进行测试表征,对比分析了V、V-N和V/V-N 3种扩散阻挡层的扩散阻挡性能.实验结果表明：V、V-N和V/V-N扩散阻挡层均能够有效阻挡Cu原子向Si基板的扩散;Cu/V/Si和Cu/V-N/Si薄膜样品分别在600和650℃时能够保持良好的热稳定性;Cu/V/V-N/Si多层薄膜中由于堆栈结构的存在,样品在700℃还具有良好的热稳定性,表明堆栈结构的V/V-N是一种较理想的扩散阻挡层.The V, V-N and V/V-N diffusion barrier layers with 50 nm thickness were deposited on Si（100） substrates by magnetron sputtering,and then the 300 nm thickness of the Cu films were prepared on diffusion barrier layers to obtain Cu/V/Si,Cu/V-N/Si and Cu/V/V-N/Si multilayer films.The multilayer film samples were subsequently annealed at 300-750℃ for 1 h in vacuum atmosphere.The crystal structures,microstructure morphologies and square resistances were characterized by X-ray diffraction （XRD）, scanning electron microscope （SEM） and the four-point probe （FPP） methods to investigate the diffusion barrier performances of the V,V-N and V/V-N films.The results show as follows;diffusion barrier layers of V,V-N and V/V-N effectively blocked the diffusion of Cu into the Si substrate. The Cu/V/Si and Cu/V-N/Si multilayer films still kept good thermal stability at the annealing temperature of 600 ℃ and 650 ℃, respectively. However, for the Cu/V/V-N/Si multilayer film, due to the existence of stacking structure, the samples maintained favorable thermal stability when being annealed at 700 ℃ .Therefore,the stacking structure of the V/V-N film was an ideal diffusion barrier layer.

关 键 词：扩散阻挡层 阻挡性能 堆栈结构 磁控溅射 

分 类 号：O644[理学—物理化学]