低功耗单片低噪声放大器芯片  

Low-power consumption monolithic microwave integrated circuit low noise amplifier

作　　者：周守利[1] 俞俊学[1] 陈伟[2] 熊德平[3] 

机构地区：[1]浙江工业大学信息工程学院,浙江杭州310023 [2]浙江大学航空航天学院,浙江杭州310027 [3]广东工业大学物理与光电学院,广东广州510006

出　　处：《浙江工业大学学报》2016年第6期624-627,共4页Journal of Zhejiang University of Technology

基　　金：广东省重大科技计划资助项目(2015B010112002);广州市科技计划项目(201504290917571)

摘　　要：基于0.15μm GaAs pHMET工艺技术的管芯特性分析,采用电流复用结构及有源偏置技术,研制了一款高鲁棒性低功耗单片低噪声放大器芯片.该款芯片具有三级拓扑结构,采用源极负反馈提高芯片稳定性,采用有源偏置技术弥补工艺波动现象造成的芯片性能波动.供电电压为5V的条件下,芯片的工作带宽为19~24GHz,增益和噪声系数分别为（24.7±0.2）,（1.4±0.1）dB,电路总电流仅为5mA.芯片尺寸为2mm×1mm.与其他相同工作频率、使用传统技术的芯片相比,噪声系数和电路功耗方面具有明显的优势.Analyzing the characteristic of transistor base on 0.15 μm GaAs PHEMT technique and using the current multiplexing structure and active bias technology, a three stage Robust and low power consumption monolithic microwave integrated circuit low noise amplifier is designed. The negative feedback is used to improve chip stability and the active bias technology is used to solve the performance fluctuation and optimize the performance of the chip. With a DC bias of 5V,the working frequency is 19~24 GHz, the gain and noise figure of the LNA are （24.7±0.2） dB and （1. 4±0. 1） dB, the total current of the chip was 5 mA. The chip area is 2 mm× 1 mm. Compared with other chips with the same operating frequency using traditional technique, the noise figure and power consumption of this chip is much lower.

关 键 词：低噪声放大器 电流复用 低功耗 有源偏置 鲁棒性 

分 类 号：TN722.3[电子电信—电路与系统]