毫米波化合物半导体材料研究进展  

Development on semiconductor materials research at millimeter wave band

作　　者：时翔[1] 张超[2] 

机构地区：[1]常州工学院,江苏常州213002 [2]南京理工大学,江苏南京210094

出　　处：《电子元件与材料》2016年第12期12-16,共5页Electronic Components And Materials

基　　金：江苏省科技项目资助(No.BRA2015076)

摘　　要：毫米波集成电路成为毫米波系统应用中必不可少的核心技术,化合物半导体材料砷化镓、磷化铟无疑在毫米波集成电路制造中占据重要地位,继砷化镓、磷化铟占据毫米波芯片衬底材料主流之后,以氮化镓材料为代表的第三代半导体材料逐渐成为目前国际毫米波芯片制造的材料研究热点。本文对以砷化镓、磷化铟、氮化镓为代表的毫米波化合物半导体材料技术及其发展,进行了总结与展望。Millimeter wave integrated circuits technology was the most necessary for millimeter wave application system. Compound semiconductors, such as gallium arsenide, indium phosphide undoubtedly occupy an important position in the millimeter wave integrated circuits manufacturing. Following the gallium arsenide and indium phosphide, gallium nitride materials as the representative of the third generation semiconductor materials become the millimeter wave integrated circuits manufacturing materials research focus. In this paper, the Ga As, In P, Ga N as the representative of the millimeter wave integrated circuits semiconductor substrate materials technology and its development, are summaried and prospected.

关 键 词：毫米波集成电路 化合物半导体 综述 砷化镓 磷化铟 氮化镓 

分 类 号：TN015[电子电信—物理电子学]