纳米MOSFET器件电流噪声测试方法研究  

Current noise measurement methods in nano-MOSFET

作　　者：贾晓菲[1] 陈文豪[2] 丁兵[1] 何亮[3] 

机构地区：[1]安康学院电子与信息工程学院,陕西安康725000 [2]中国西南电子技术研究所,四川成都610063 [3]西安电子科技大学先进材料与纳米科技学院,陕西西安710071

出　　处：《电子元件与材料》2016年第12期45-48,共4页Electronic Components And Materials

基　　金：国家自然科学基金重点项目(No.61076101);陕西省教育厅科学研究计划项目(No.16JK1016)

摘　　要：针对常规纳米尺度电子元器件的噪声特性,研究其噪声的基本测试条件,并建立测试系统。在屏蔽条件下采用低温装置和超低噪声前置放大器,能有效抑制外界干扰。应用该系统对实际纳米MOSFET器件进行噪声测试得到其电流噪声,在测试基础上通过计算分别得到热噪声和散粒噪声,同时分析器件工作在亚阈区和反型区下的电流噪声随源漏电压和电流的变化关系。结果表明测试结果与理论分析吻合,验证了测试系统的准确性。Noise performance of regular nano-scale electronic components was studied to analyze the basic noise testing conditions and establish the noise testing system. Taking low temperature and ultra-low noise preamplifier under shielding conditions can effectively suppress external interference. This system was used to test current noise in the actual nano-MOSFET devices, on the basis of which thermal noise and shot noise were respectively calculated and current noise was analyzed with variation of the source-drain voltage and current in the sub-threshold region and inversion region. The results show that the test results accord with theoretical analysis and accuracy of the measurement system is verified.

关 键 词：纳米MOSFET 噪声测试 低温装置 电流噪声 散粒噪声 热噪声 

分 类 号：TN407[电子电信—微电子学与固体电子学]