基片温度对磁控溅射HfO_2薄膜结构和性能影响分析  

Effect of substrate temperature on structure and properties of HfO_2 thin films prepared by magnetron sputtering

作　　者：惠迎雪[1] 刘政[2,3] 王钊[1] 刘卫国[1] 徐均琪[1] 

机构地区：[1]西安工业大学光电工程学院,陕西西安710021 [2]中科院西安光学精密机械研究所,陕西西安710119 [3]飞秒光电科技(西安)有限公司,陕西西安710119

出　　处：《应用光学》2016年第6期872-879,共8页Journal of Applied Optics

基　　金：国家自然科学基金项目(61378050);陕西省科技厅重点实验室项目(2013SZS14-Z02);陕西省教育厅重点实验室科研计划(15JS032)

摘　　要：在纯氧条件下,采用直流磁控溅射技术在单晶硅基片上沉积氧化铪(HfO_2)薄膜,并研究了沉积过程中基片温度对薄膜结构和性能的影响规律。利用X射线衍射仪(XRD)和X射线能谱(XPS)表征了薄膜的晶体结构和组分,利用原子力显微镜(AFM)观察薄膜表面形貌,利用纳米力学测试系统表征了薄膜的纳米硬度和弹性模量。结果表明:磁控溅射制备的HfO_2薄膜样品呈(111)择优生长,其晶粒尺寸随着基片温度的升高而增大,但其晶型并不发生转变。随着基片温度的增加,基片中的硅元素向薄膜内扩散,影响了薄膜的化学计量比。沉积薄膜的表面形貌和力学性能亦受到其结构和组分变化的影响。在200℃条件下制备的HfO_2薄膜纯度高,O、Hf元素化学计量达到了1.99,其表面质量和力学性能均达到了最佳值,随着基片温度升高至300℃以上,薄膜纯度下降,表面质量和力学性能均产生劣化。HfO_2thin films were deposited on single crystalline silicon substrate by using magnetron sputtering in totally reactive oxygen plasma.Effect of substrate temperatures on the structure and properties of HfO_2 films were investigated.Phase structure,component and surface topography were characterized by using the X-ray diffraction analysis(XRD),X-ray photoelectron spectroscopy(XPS)and atomic force microscopy(AFM),respectively.The mechanical properties of the films were measured by using the nano-indentation.It is indicated that the(111)-oriented HfO_2 films could be obtained and the structure of the as-deposited films was not changed as the increase of the substrate temperature.The stoichiometric ratio,surface topography and nano-mechanical properties of the as-deposited films were dependent on the substrate temperature.The stoichiometric ratio would be deteriorated with the substrate tem-perature increasing,which was attributed to the diffusion of silicon.The best substrate temperature was found to be 200 ℃.The atom ratio of O/Hf for the as-deposited films could arrive to be 1.99.In addition,the lowest value of root-mean-square(RMS)roughness and the maximum value of hardness and elastic modulus were obtained.

关 键 词：HFO2薄膜 磁控溅射 晶体结构 组分 纳米力学性能 

分 类 号：TN305.8[电子电信—物理电子学] O484.1[理学—固体物理]