工艺条件对中频磁控溅射CIGS薄膜的影响  

Effect of process on mid-frequency magnetron sputtering Cu(In,Ga)Se_2 thin films for solar cells

作　　者：魏丽娟[1] 刘贵山[1] 刘洋[1] 王勇兵[1] 高文元[1] 郝洪顺[1] WEI Lijuan LIU Guishan LIU Yang WANG Yongbing GAO Wenyuan HAO Hongshun(School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034, China)

机构地区：[1]大连工业大学纺织与材料工程学院,辽宁大连116034

出　　处：《大连工业大学学报》2016年第6期477-481,共5页Journal of Dalian Polytechnic University

基　　金：大连市建委资助项目(2012-456);大连市科技平台建设项目(2010-354)

摘　　要：采用铜铟镓硒(CIGS)四元合金靶材,利用中频溅射电源在钠钙玻璃基底上磁控溅射CIGS薄膜。研究了溅射功率及基底温度对CIGS薄膜结构及性能的影响。采用SEM、XRD、UV-Vis及四探针方阻测试仪对CIGS薄膜结构及性能进行了表征。结果表明,随着功率的升高,薄膜晶界明显,晶粒增大,光吸收系数达到105 cm-1数量级;随着基底温度升高到250℃,制备的CIGS吸收层薄膜结晶性最好,晶粒尺寸达到1μm,电阻率3 200Ω·cm,光吸收系数达到0.98×105 cm-1,禁带宽度为1.41eV。CIGS thin films were produced by mid-frequency magnetron sputtering using the quaternary-CIGS target in stoichiometric proportion. The influences of power and substrate temperature on the structure and properties of CIGS thin flims were investigated by SEM,XRD,UV-Vis and four-point probe methods.The results showed that the grain boundaries were obvious and the grain size increased with the increasing of the power,and the optical absorption coefficient of thin films could reach to 105 cm-1.The crystallinity of CIGS absorption layer film was best at substrate temperature of 250 ℃.In that condition,the crystal size and the resistivity was 1μm and3 200Ω·cm,while the optical absorption coefficient could reach to 0.98×10^5 cm^-1 and the band-gap was 1.41 eV.

关 键 词：中频磁控溅射 CIGS薄膜 功率 基底温度 

分 类 号：TM914.4[电气工程—电力电子与电力传动]