基于60nmT型栅f_T&f_(max)为170&210 GHz的InAlN/GaN HFETs器件（英文）  

60 nm T-shaped-gate InAlN/GaN HFETs with f_T& f_(max) of 170 & 210 GHz

作　　者：吕元杰[1] 冯志红[1] 张志荣[1] 宋旭波[1] 谭鑫[1] 郭红雨[1] 尹甲运[1] 房玉龙[1] 蔡树军[1] 

机构地区：[1]河北半导体研究所,专用集成电路国家级重点实验室,河北石家庄050051

出　　处：《红外与毫米波学报》2016年第6期641-645,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(61306113)

摘　　要：基于蓝宝石衬底InAlN/GaN异质结材料研制具有高电流增益截止频率(f_T)和最大振荡频率(f_(max))的InAlN/GaN异质结场效应晶体管(HFETs).基于再生长n+GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600nm.此外,采用自对准栅工艺制备60nmT型栅.由于器件尺寸的缩小,在Vgs=1V时,器件最大饱和电流(Ids)达到1.89A/mm,峰值跨导达到462mS/mm.根据小信号测试结果,外推得到器件的f_T和f_(max)分别为170GHz和210GHz,该频率特性为国内InAlN/GaNHFETs器件频率的最高值.Scaled InAlN/GaN heterostructure field-effect transistors （HFETs） on sapphire substrate with high unity current gain cut-off frequency （fT） and maximum oscillation frequency （fm,x） were fabricated and characterized. In the device, scaled source-to-drain distance （ Lsd ） of 600 nm was realized by employing nonalloyed regrown n ＋ - GaN Ohmic contacts. Moreover, a 60-nm T-shaped gate was fabricated by self-aligned-gate technology. A high drain saturation current density （lds） of 1.89 A/mm @ Vgs = 1 V and a peak extrinsic transconductance （ gm ） of 462 mS/mm were obtained in the scaled InA1N/GaN HFETs. In addition, from the small-signal RF measurements, the values offT andfmax for the device with 60-nm gate were extrapolated to be 170 GHz and 210 GHz at the same bias. To our knowledge, they are the highest values of fr and fmax for the domestic InA1N/GaN HFETs.

关 键 词：InAlN/GaN 异质结场效应晶体管(HFETs) 电流增益截止频率(fT) 最大振荡频率(fmax) 

分 类 号：TN385[电子电信—物理电子学]