VO_2薄膜常见制备方法综述  

Review of the Common Preparation Methods of VO_2 Thin Films

作　　者：侯典心 路远[1,2,3] 杨玚[1,2,3] 

机构地区：[1]电子工程学院,安徽合肥230037 [2]红外与低温等离子体安徽省重点实验室,安徽合肥230037 [3]脉冲功率激光技术国家重点实验室,安徽合肥230037

出　　处：《红外技术》2016年第12期1020-1025,共6页Infrared Technology

基　　金：脉冲功率激光技术国家重点实验室主任基金资助项目(SKL2013ZR03)

摘　　要：VO_2是一种相变温度为68℃接近室温的热致相变材料,具有十分广泛的潜在应用价值,自从被发现以来针对它的研究就从未停止。如何使用恰当的制备方法简单、快速的制备性能良好的VO_2薄膜一直是研究的热点之一。目前,VO_2薄膜常见的制备方法主要有蒸发法、溶胶-凝胶法、脉冲激光沉积工艺、分子束外延法及磁控溅射法等。本文详细介绍了每种方法的相应制备原理与国内外研究现状,并用表格的方式简洁明了地对比出每种方法的优势与不足,为不同条件下VO_2薄膜的制备方法的选择提供了参考。同时,本文也对未来研究方向做出展望,对今后VO_2薄膜的制备与应用研究有重要的借鉴意义。VO2, a type of thermally induced phase change material, whose phase transition temperature is 68℃ （closest to room temperature）, has a very wide potential application value. The research on it has never ceased since its discovery. How to use a proper preparation method to prepare the VO2 thin film with good performance has remained a hot research in recent years. Currently, metal thermal evaporation, sol-gel, pulsed laser deposition（PLD）, magnetron sputtering, and molecular beam epit^ixy（MBE） method are the common methods of preparing VO2 thin films. The mechanism of each method and the research status at home and abroad are discussed, and the advantages and disadvantages of each method are compared clearly with a table in this paper, giving significant reference to the preparation of VO2 thin films under different conditions It also predicts the future research direction, paving a way for the further studies of the preparations and applications of VO2 thin film.

关 键 词：相变材料 VO2制备方法 脉冲激光沉积工艺 分子束外延法 磁控溅射法 

分 类 号：TB321[一般工业技术—材料科学与工程]