重掺硼硅片表面清洗研究  

Surface Cleaning of Heavily B-Doped Silicon

作　　者：墨京华 李俊峰[1] 刘大力[1] 刘斌[1] 鲁进军[1] 周旗钢[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料有限公司,北京100088

出　　处：《稀有金属》2017年第1期52-56,共5页Chinese Journal of Rare Metals

基　　金：国家科技重大专项项目(2010zx02302-001)资助

摘　　要：研究了SC-1清洗过程对重掺硼和轻掺硼硅片表面颗粒、微粗糙度的影响及其清洗后硅片表面化学组态分布,采用表面颗粒激光扫描仪、原子力显微镜及X射线光电子能谱(XPS)对重掺硼和轻掺硼硅片在SC-1清洗过程中表现的不同清洗特性进行分析。结果表明:在SC-1清洗中,重掺硼硅片表面更容易吸附颗粒,需要更长的清洗时间来得到清洁表面;随清洗时间延长,重轻掺硅片表面微粗糙度均有增大趋势,且重掺硼硅片表面微粗糙度始终比轻掺硼硅片大,通过表面高度结果可知,相同清洗条件下,重掺硼硅片表面纵向腐蚀深度比轻掺硼大0.3 nm,与(111)面的晶面间距相近;XPS结果显示重掺硼硅单晶中大量硼原子的引入对SC-1清洗过程中的各向异性腐蚀有一定的增强效果,适当改变SC-1清洗中的氧化剂的含量有助于得到更好的表面质量。The influence of SC-1 cleaning process on particles, micro-roughness and chemical configuration distribution on silicon surface was studied. The cleaning characteristics of both heavily boron doped silicon and lightly boron doped silicon were analyzed by laser scanner of surface particles, atomic force microscopy and X-ray photoelectron spectroscopy （XPS） separately. The experimental results showed that the cleaning process of heavily doped silicon needed a longer time compared with lightly doped silicon, since the heavily doped silicon was easily contaminated. The surface micro-roughness increased with cleaning time, and the average roughness of heavily B-doped silicon surface was always bigger than that of the light one. According to height analysis results, the vertical corrosion depth of heavily B-doped silicon was as deeper as 0.3 nm, which was nearly the size of inter-planar distance on （ 111 ） plane. The XPS results indicated that the concentration of boron dopants had a certain enhanced effect on anisotropy corrosion of wafer surface in SC-1 process. An appropriate change of the oxidant content in SC-1 cleaning solution would be helpful to getting a higher surface quality.

关 键 词：重掺B硅单晶 表面微粗糙度 颗粒 SC-1清洗 

分 类 号：TN304.1[电子电信—物理电子学]