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作 者:张继德[1] 刘成有[2] 辛春雨[1] 于卓[1] 董振江[1] ZHANG Jide LIU Chengyou XIN Chunyu YU Zhuo DONG Zhenjiang(School of Physics and Electronic Information, Baicheng Normal University, Baicheng 137000, J ilin Province, China School of Physics, Tonghua Normal University, Tonghua 134001, Jilin Province, China)
机构地区:[1]白城师范学院物理与电子信息学院,吉林白城137000 [2]通化师范学院物理学院,吉林通化134001
出 处:《吉林大学学报(理学版)》2017年第1期145-149,共5页Journal of Jilin University:Science Edition
基 金:国家自然科学基金(批准号:20873052);吉林省教育厅"十二五"科学技术研究项目(批准号:2013499)
摘 要:采用磁控溅射技术在SiO_2衬底上制备ZnO薄膜,并通过X射线衍射仪、原子力显微镜、紫外-可见分光光度计和荧光光谱仪对薄膜的晶体结构、表面形貌、带隙宽度和光致发光性质进行测试表征,结合飞秒激光(波长为800nm,脉宽50fs)和Z扫描方法测量该薄膜的三阶非线性光学特性.结果表明,其三阶非线性折射率和非线性吸收系数均为正值,分别为3.50×10-18 m2/W和2.88×10-11 m/W.ZnO thin films were deposited on SiO2 substrate by magnetron sputtering technique. The crystal structure, surface topography, band gap width and photoluminescence properties of the thin films were characterized by X-ray diffraction, atomic force microscope, UV-Vis spectrophotometer and fluorescence spectrometer. The third order nonlinear optical properties of the thin films were measured by Z-scan method using femtosecond laser (wavelength of 800 nm, pulse width of 50 fs). The results show that the third order nonlinear refractive index and nonlinear absorption coefficient of the film are all positive, the values are 3.50×10-18 m2/W and 2.88×10-11 m/W.
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