4H-SiC和6H-SiC功率VDMOSFET的单粒子烧毁效应  

Single-Event Burnout Effect of 4H-SiC and 6H-SiC Power VDMOSFETs

作　　者：刘忠永[1] 蔡理[1] 刘小强[1] 刘保军[2] 崔焕卿[1] 杨晓阔[1] 

机构地区：[1]空军工程大学理学院,西安710051 [2]空军第一航空学院,河南信阳464000

出　　处：《微纳电子技术》2017年第2期80-85,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(11405270)

摘　　要：对基于4H-SiC和6H-SiC的垂直双扩散MOSFET(VDMOSFET)的单粒子烧毁(SEB)效应进行了对比研究。建立了器件的二维仿真结构,对不同SiC材料构成的器件物理模型及其材料参数进行了修正。利用Silvaco TCAD软件进行了二维器件的特性仿真,得到了两器件SEB效应发生前后的漏极电流曲线和电场分布图。研究结果表明,4H-SiC和6H-SiC VDMOSFET的SEB阈值电压分别为335 V和270 V,发生SEB效应时的最大电场强度分别为2.5 MV/cm和2.2 MV/cm,4H-SiC材料在抗SEB效应方面比6H-SiC材料更有优势。所得结果可为抗辐射功率器件的设计及应用提供参考。The single-event burnout （SEB） effects of 4H-SiC and 6H-SiC vertical double-diffused MOSFETs （VDMOSFETs） were compared and studied. The two-dimensional simulation struc- ture of the devices was built, and the physical model and material parameters of the devices fabri- cated with different SiC materials were modified. The characteristics simulation of the two-dimen- sional devices was carried out with Silvaco TCAD software, and the drain current curves and elec- tric field distribution profiles of the two devices before and after the SEB effect were obtained. The research results show that the SEB threshold voltages of the 4H-SiC and 6H-SiC VDMOS- FETs are 335 V and 270 V, respectively. Besides, when the SEB effect occurs, the maximum electric field intensities of the two devices are 2.5 MV/cm and 2.2 MV/cm, respectively. The 4H-SiC material is better than the 6H-SiC material in the aspect of anti-SEB effect. The obtainedresults can provide a reference for the design and application of the anti-radiation power device.

关 键 词：碳化硅(SIC) 单粒子烧毁(SEB) 垂直双扩散MOSFET((VDMOSFET)) SEB阈 值电压 二维器件仿真 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN406