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作 者:张羽[1] 陈家荣[1] Zhang Yu Chen Jiarong(College of Journalism & Commucation, Guiyang Minzu University, Guiyang 550025, Chin)
出 处:《半导体技术》2017年第2期124-128,共5页Semiconductor Technology
基 金:国家自然科学基金面上项目(51472051);国家自然科学基金青年科学基金资助项目(61504031);贵州民族大学科研基金资助项目(16jsxm012)
摘 要:高亮度硅量子点是实现硅光电子集成的关键部件,针对利用硅原子的自组织生长方法制备的硅量子点具有浓度低、发光弱等缺点,研究了利用硝酸氧化和氢氟酸腐蚀制备量产的硅量子点的方法,增加了硅量子点的浓度,从而提高了硅量子点的发光强度。首先,通过改变硝酸和氢氟酸的浓度和反应时间,获得不同尺寸的硅量子点和过滤前后硅量子点溶液的发光峰位。其次,通过分析可知,化学腐蚀法制备的硅量子点浓度远远高于硅原子自组织生长方法制备的量子点浓度,大大地提高其光致发光强度。最后,将硅量子点加入溶胶-凝胶法制备的Si O2中,经过不同的退火温度,得到的硅量子点的发光峰位和强度不同。The high-brightness silicon quantum dot is the key component for the realization of integrated silicon photonics. The silicon quantum dots fabricated by the self-organization growth method of silicon atoms have the disadvantages of low concentration,weak luminescence and so on. The preparation methods of mass production silicon quantum dots using nitric acid oxidation and hydrofluoric acid corrosion were studied,and the concentration and the luminous intensity of silicon quantum dots were improved. Firstly,by changing the concentration of the nitric acid and hydrofluoric acid and the reaction time,silicon quantum dots with different sizes were prepared and the luminescence peak position of the silicon quantum dots solution before and after filtration were measured. Secondly,through the analysis,the concentration of silicon quantum dots prepared by the chemical etching was much higher than that of the silicon quantum dots prepared by the self-organized growth of silicon atoms. And the photoluminescence intensity of silicon quantum dots was greatly improved. Finally,the silicon quantum dots were added into the Si O2 which prepared by the sol-gel method,and the luminescence peaks position and intensity of the obtained silicon quantum dots were different under different annealing temperatures.
关 键 词:量产 硅量子点(SQD) 光致发光 化学腐蚀 热退火
分 类 号:TN304.12[电子电信—物理电子学]
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