锌掺杂包覆状氮化镓纳米线的制备及表征  

Synthesis and characterization of coated Zn-doped Ga N nanowires

作　　者：吴丽君[1] 李林虎[1] 张勃[1] 张轩硕[1] 宋建宇[1] 沈龙海[1] 

机构地区：[1]沈阳理工大学理学院,沈阳110159

出　　处：《桂林理工大学学报》2016年第4期804-807,共4页Journal of Guilin University of Technology

基　　金：国家自然科学基金项目(11004138);辽宁省优秀人才支持计划项目(LJQ2011020);沈阳市科技局应用基础专项(F16-205-1-16)

摘　　要：采用化学气相沉积法在石英衬底上沉积出锌掺杂的GaN纳米线。利用X射线衍射（XRD）、扫描电子显微镜（SEM）、X射线能谱仪（EDS）和拉曼光谱（Raman）对锌掺杂GaN纳米线进行了结构和形貌的表征。结果表明：锌掺杂后GaN纳米线的XRD图谱向低角度方向移动,衍射峰更加明显。锌掺杂Ga N纳米线存在一层包覆结构,纳米线的直径范围约为300~500 nm,包覆层的厚度在150~200 nm。锌掺杂GaN纳米线的Raman光谱在E2（high）和A1（LO）出现了微小的红移。最后对包覆结构的可能形成机理进行了探讨。Zn-doped Ga N nanowires were deposited on quartz substrate by the CVD method.The structure and the morphology of Ga N nanowires were characterized by X-ray diffraction（XRD）,scanning electron microscopy（SEM）,Energy Dispersive X-ray spectroscopy（EDS） and Raman spectra（Raman）.The results show that XRD patterns of Zn-doped Ga N nanowires produce small shift to the the low-angle value and diffraction peaks become more obvious.Zn-doped Ga N nanowires were coated with a layer of nano structure.The diameter of the nanowire is about 300-500 nm and the thickness of the layer is about 150-200 nm.In Raman spectra of Zn-doped Ga N nanowires,E2（high） and A1（LO） model produced a small red shift.The possible growth mechanism of coated Zn-doped Ga N nanowires is also discussed.

关 键 词：化学气相沉积 GAN纳米线 包覆结构 锌掺杂 

分 类 号：TB383[一般工业技术—材料科学与工程]