一种简化衬底模型的SOI MOS变容管模型  

A Simplified Substrate Model for SOI MOS Varactor Model

作　　者：李文钧[1] 陈小川[1] 刘军[1] 

机构地区：[1]杭州电子科技大学CAD研究所,杭州310027

出　　处：《电子器件》2016年第6期1297-1301,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(61372021)

摘　　要：提出一种适用于反型层RF SOI MOS变容管行为表征模型。在BSIMSOI的基础上,模型采用简化的衬底模型和外围射频寄生模型来表征变容管的射频寄生效应,同时采用T、π互转的方式提出参数提取算法。模型最终应用到华虹宏力SOI工艺提供的不同栅指,每栅指长度为1.6μm、宽度为5μm的MOS变容管器件,并且在15 GHz以下,模型与测量数据的CV、QV以及S参数有较好的拟合。在高频情况下,模型既保证了精度又解决了参数提取困难等问题。A compact model for RF SOI MOS varactor characterization is presented. The model adopts the simplified loss of SOI substrate and peripheral parasitic RF model to reflect the characterization of varactor RF parasitic effects based on the BSIMSOI. At the meantime,using T π convertion to propose a method to analytically extract the substrate network model parameters. The model has been applied to the devices that have a fixed unit finger width of 5 μm and fixed unit finger length of 1.6 μm with diverse number of fingers were fabricated by Huahong Grace,and under the 15 GHz,the data of model and measurement about CV,QV and S parameters have better fitting. In the high frequency,the model can not only ensure the accuracy but also solve the problem of parameter extraction and so on.

关 键 词：SOI MOS变容管 简化衬底模型 数据拟合 参数提取算法 

分 类 号：TN386.1[电子电信—物理电子学]