MOCVD反应室流场分析及其对GaN生长的影响  

Effect of reactor geometry on GaN in a vertical MOCVD reactor

作　　者：冯兰胜[1] 过润秋[1] 张进成[2] 

机构地区：[1]西安电子科技大学机电工程学院,陕西西安710071 [2]西安电子科技大学微电子学院,陕西西安710071

出　　处：《西安电子科技大学学报》2017年第1期171-175,共5页Journal of Xidian University

基　　金：国家自然科学基金资助项目(61334002);国家重大科技专项资助项目(2011ZX01002-001)

摘　　要：为了优化设计金属有机[化合物]CVD反应室,以生长出高质量的GaN材料,对一种垂直喷淋式金属有机[化合物]CVD系统中生长GaN材料的生长过程进行了模拟.模拟结果表明,反应室中衬底石墨基座的旋转速度和反应室的高度对GaN生长过程中的气相传输过程和材料质量均有影响.随着基座旋转速度的升高,反应室内部的流场分布趋向均匀,衬底表面的气体流速变快,GaN生长速率升高,并且厚度均匀性也变好,但是速度超过一定限度后会使生长速率降低;在同样的生长条件下,反应室的高度越高,反应室内部的流场分布越均匀,这有利于提高材料的均匀性,同时GaN生长速率先降低后升高,但气相传输中的气相预反应会逐渐增强.A simulation of the GaN growth in a vertical MOCVD reactor is presented. The results show that the gas phase transfer process in GaN growth and material quality of GaN are all affected by the reactor height and the rotation speed of the substrate. With the increasing rotation speed of the suhstrate, the flow field distribution in the MOCVD reactor becomes more uniform and stable, and the gas flow rate on the substrate surface and the GaN growth rate increase. The uniformity of the GaN is improved at the same time. But the growth rate will decrease when the rotation speed becomes too high. Under the same conditions, the flow field becomes more uniform and stable when the reactor height increases, which is helpful to improving the uniformity of the GaN material. And the growth rate decreases first and then increases in the same process; the gas phase reaction is enhanced at the same time.

关 键 词：GAN 金属有机[化合物]CVD 反应室结构 反应动力学 

分 类 号：TN204[电子电信—物理电子学]