GaAs半导体表面的S-N混合等离子体钝化及在激光器工艺上的应用  

GaAs surface passivation by S-N plasma and its application in diode laser processing

作　　者：许留洋[1] 高欣[1] 袁绪泽 夏晓宇[1] 曹曦文 乔忠良[1] 薄报学[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《光电子．激光》2017年第2期143-146,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(61176048;61177019;61308051);吉林省科技发展计划(20150203007GX;20130206016GX);中物院高能激光重点实验室基金(2014HEL01)资助项目

摘　　要：利用射频(RF)等离子方法,对GaAs半导体表面进行了S-N混合等离子体钝化实验,并对工作压强、RF功率进行了优化。光致发光(PL)测试结果表明,经过S-N混合等离子体钝化的GaAs样品PL强度提高135%。将本文钝化方法应用到980nm波长InGaAs应变量子阱(QW)激光器的制备工艺,器件的COD阈值功率明显增加。GaAs surface passivation has been studied by S and N mixture plasma method for the first time while the radio frequency （RF） power and pressure are adjusted to optimize the passivation effect by photoluminescence （PL） measurement. The experimental results show that the PL intensity of the passi- vated sample is 135 % higher than that without treatment. This passivation process has been used in 980 nm wavelength InGaAs strained quantum well （QW） semiconductor laser fabrication,and an obvious in- crease in facet catastrophic optical damage （COD） power can be obtained.

关 键 词：GAAS COD 光致发光(PL) 钝化 

分 类 号：TN248.4[电子电信—物理电子学]