直流磁控溅射技术低温制备高电导和高透明的氢掺杂AZO薄膜  

Influence of H_2 Flow-Rate on Conductivity Enhancement of Al-Doped ZnO Coatings

作　　者：刘智[1] 徐晴[1] 谷锦华[1] 卢景霄[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052

出　　处：《真空科学与技术学报》2017年第2期161-164,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家高技术研究发展计划资助课题(批准号:2011AA050501)

摘　　要：采用直流磁控溅射的方法制备掺铝氧化锌(AZO)透明导电薄膜,通过溅射过程中加入氢气的方法来降低AZO薄膜的电阻率。结果表明:通过加入氢气的方法能有效降低AZO薄膜的电阻率;在衬底温度为225℃的低温条件下,通过优化其它沉积参数,制备了电阻率最低为4.5×10^(-4)Ω·cm、可见光区平均透光率在90%的优质AZO薄膜。这说明在溅射过程中引入一定流量的氢气,H可以起到掺杂作用,提高AZO薄膜的电导率。The Al-doped ZnO（ AZO） thin films were synthesized by DC magnetron sputtering of ZnO target at low temperature. The influence of the H2 flow rate and substrate temperature on the resistivity and transmittance of the AZO coatings was investigated with X-ray diffraction,scanning electron microscopy and conventional surface probes. The results show that the H2 flow-rate had a major impact on the decreases of the resistivity and growth temperature of the AZO thin films. To be specific,deposited at 225℃ and a H2 flow-rate of 5. 6 mL / mim,the resistivity and average transmittance in the visible range of the H-doped AZO were 4. 5 × 10^-4Ω·cm and 90%,respectively.The shallow energy levels introduced by hydrogen impurity may be responsible for the conductivity enhancement of AZO coating.

关 键 词：AZO薄膜 氢掺杂 直流磁控溅射 电阻率 

分 类 号：O484.1[理学—固体物理]